IRGPS60B120KDP International Rectifier, IRGPS60B120KDP Datasheet - Page 5

• Manufacturer Part Number: IRGPS60B120KDP
• Description: IGBT W/DIODE 1200V 105A SUPER247
• Manufacturer: International Rectifier

Specifications of IRGPS60B120KDP

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.75V @ 15V, 60A
• Current - Collector (ic) (max): 105A
• Power - Max: 595W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: Super-247-3 (Straight Leads)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Transistor Type: IGBT
• Dc Collector Current: 105A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 595W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRGPS60B120KDP

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20
18
16
14
12
10
20
18
16
14
12
10
8
6
4
2
0
8
6
4
2
5
5
Fig. 11 - Typical V
Fig. 9 - Typical V
10
10
T
J
T
= 125°C
J
V GE (V)
V GE (V)
= -40°C
CE
CE
I CE = 30A
I CE = 60A
I CE = 120A
I CE = 30A
I CE = 60A
I CE = 120A
15
15
vs. V
vs. V
GE
GE
20
20
500
450
400
350
300
250
200
150
100
20
18
16
14
12
10
50
8
6
4
2
0
0
Fig. 12 - Typ. Transfer Characteristics
IRGPS60B120KDP
5
0
Fig. 10 - Typical V
T J = 125°C
V
CE
5
T
= 50V; tp = 10µs
10
J
T J = 25°C
T J = 125°C
= 25°C
V GE (V)
V GE (V)
10
CE
vs. V
I CE = 30A
I CE = 60A
I CE = 120A
15
T J = 25°C
15
GE
5
20
20