Audio Amplifiers 2X15W BTL CLASS D AMP+VOLCTRL

TDA8932T

Manufacturer Part NumberTDA8932T
DescriptionAudio Amplifiers 2X15W BTL CLASS D AMP+VOLCTRL
ManufacturerNXP Semiconductors
TDA8932T datasheet
 

Specifications of TDA8932T

ProductClass-DOutput Power50 W
Available Set Gain36 dBCommon Mode Rejection Ratio (min)56 dB
Thd Plus Noise0.015 %Operating Supply Voltage22 V
Maximum Power Dissipation5000 mWMaximum Operating Temperature+ 85 C
Mounting StyleSMD/SMTAudio Load Resistance8 Ohms
Dual Supply Voltage+/- 11 VInput Signal TypeDifferential
Minimum Operating Temperature- 40 COutput Signal TypeDifferential, Single
Supply TypeSingle or DualSupply Voltage (max)36 V
Supply Voltage (min)10 VOutput Type1-Channel Mono or 2-Channel Stereo
Package / CaseSOIC-32Lead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesTDA8932T/N1,112  
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TDA8932
Class-D audio amplifier
Rev. 02 — 12 December 2006
1. General description
The TDA8932 is a high efficiency class-D amplifier with low power dissipation.
The typical output power is 2
1
30 W typical in full-bridge application (R
device can be used without any external heat sink when playing music. If proper cooling
via the printed-circuit board is implemented, a continuous output power of 2
feasible. Due to the implementation of thermal foldback, even for high supply voltages
and/or lower load impedances, the device remains operating with considerable music
output power without the need for an external heat sink.
The device has two full-differential inputs driving two independent outputs. It can be used
as mono full-bridge configuration (BTL) or as stereo half-bridge configuration (SE).
2. Features
I
Operating voltage from 10 V to 36 V asymmetrical or 5 V to 18 V symmetrical
I
Mono-bridged tied load (full-bridge) or stereo single-ended (half-bridge) application
I
Application without heatsink using thermally enhanced small outline package
I
High efficiency and low-power dissipation
I
Thermally protected and thermal foldback
I
Current limiting to avoid audio holes
I
Full short-circuit proof across load and to supply lines (using advanced current
protection)
I
Switchable internal or external oscillator (master-slave setting)
I
No pop noise
I
Full-differential inputs
3. Applications
I
Flat panel television sets
I
Flat panel monitor sets
I
Multimedia systems
I
Wireless speakers
I
Mini and micro systems
I
Home sound sets
15 W in stereo half-bridge application (R
= 8 ). Due to the low power dissipation the
L
Preliminary data sheet
= 4 ) or
L
15 W is

TDA8932T Summary of contents

  • Page 1

    TDA8932 Class-D audio amplifier Rev. 02 — 12 December 2006 1. General description The TDA8932 is a high efficiency class-D amplifier with low power dissipation. The typical output power typical in full-bridge application (R device ...

  • Page 2

    ... Output power is measured indirectly; based the series resistance of inductor of low-pass LC filter in the application Ordering information Table 2. Type number Package TDA8932T TDA8932_2 Preliminary data sheet Quick reference data = 320 kHz unless otherwise specified. osc amb Conditions supply voltage asymmetrical supply supply current Sleep mode ...

  • Page 3

    ... NXP Semiconductors 6. Block diagram OSCREF 10 OSCILLATOR 2 IN1P V SSD 3 IN1N 12 INREF 15 IN2P 14 IN2N PROTECTIONS: OVP, OCP, OTP, 4 DIAG 7 CGND 6 POWERUP 5 ENGAGE 13 TEST Fig 1. Block diagram TDA8932_2 Preliminary data sheet OSCIO 31 PWM MODULATOR MANAGER PWM MODULATOR UVP, TF, WP MODE TDA8932 9 1, 16, 17 SSA SSD(HW) Rev. 02 — ...

  • Page 4

    ... V SSD(HW) DREF TDA8932_2 Preliminary data sheet 1 V SSD(HW) IN1P 2 IN1N 3 4 DIAG 5 ENGAGE POWERUP 6 CGND DDA TDA8932T V 9 SSA OSCREF 10 HVPREF 11 12 INREF TEST 13 IN2N 14 15 IN2P V 16 SSD(HW) Pin description Pin Description 1 negative digital supply voltage and handle wafer connection ...

  • Page 5

    ... NXP Semiconductors Table 3. Symbol HVP2 V DDP2 BOOT2 OUT2 V SSP2 STAB2 STAB1 V SSP1 OUT1 BOOT1 V DDP1 HVP1 OSCIO V SSD(HW) TDA8932_2 Preliminary data sheet Pin description …continued Pin Description 19 half supply output voltage 2 for charging single-ended capacitor for channel 2 20 positive power supply voltage for channel 2 ...

  • Page 6

    ... NXP Semiconductors 8. Functional description 8.1 General The TDA8932 is a mono full-bridge or stereo half-bridge audio power amplifier using class-D technology. The audio input signal is converted into a Pulse Width Modulated (PWM) signal via an analog input stage and PWM modulator. To enable the output power ...

  • Page 7

    ... NXP Semiconductors If the transition between Mute mode and Operating mode is controlled via a time constant, the start-up will be pop free since the DC output offset voltage is applied gradually to the output between Mute mode and Operating mode. The bias current setting of the VI-converters is related to the voltage on pin ENGAGE: • ...

  • Page 8

    ... NXP Semiconductors If two or more TDA8932 devices are used in the same audio application recommended to synchronize the switching frequency of all devices. This can be realized by connecting all pins OSCIO together and configure one of the TDA8932 in the application as clock master, while the other TDA8932 devices are configured in slave mode. Pin OSCIO is a 3-state input or output buffer. Pin OSCIO is confi ...

  • Page 9

    ... NXP Semiconductors 8.4 Protection The following protection is included in the TDA8932: • Thermal Foldback (TF) • OverTemperature Protection (OTP) • OverCurrent Protection (OCP) • Window Protection (WP) • Supply voltage protection: – UnderVoltage Protection (UVP) – OverVoltage Protection (OVP) – UnBalance Protection (UBP) • ...

  • Page 10

    ... NXP Semiconductors • In case of a short to one of the supply lines, this will trigger the OCP and the amplifier will be shut down. During restart the window protection will be activated result the amplifier will not start until 100 ms after the short to the supply lines is removed. ...

  • Page 11

    ... NXP Semiconductors In a symmetrical supply the UBP is released when the unbalance of the supply voltage is within its starting value. Table 6 Table 6. Protection OTP OCP WP UVP OVP UBP 8.5 Diagnostic input and output Whenever a protection is triggered, except for TF, pin DIAG is activated to LOW level (see Table 6) ...

  • Page 12

    ... NXP Semiconductors Fig 6. Input configuration for mono BTL application 8.7 Output voltage buffers When pin POWERUP is set HIGH, the half supply output voltage buffers are switched on in asymmetrical supply configuration. The start-up will be pop free since the device starts switching when the capacitor on pin HVPREF and the SE capacitors are completely charged ...

  • Page 13

    ... NXP Semiconductors 9. Internal circuitry Table 7. Pin TDA8932_2 Preliminary data sheet Internal circuitry Symbol Equivalent circuit V SSD(HW) V SSD(HW) V SSD(HW) V SSD(HW) IN1P IN1N INREF 2, 15 IN2N IN2P DIAG ENGAGE Rev. 02 — 12 December 2006 TDA8932 Class-D audio amplifier 1, 16, V DDA 17 SSA 001aad784 V DDA ...

  • Page 14

    ... NXP Semiconductors Table 7. Pin TDA8932_2 Preliminary data sheet Internal circuitry …continued Symbol Equivalent circuit POWERUP CGND V DDA V SSA Rev. 02 — 12 December 2006 TDA8932 Class-D audio amplifier V DDA 6 V CGND 001aad788 SSA V DDA 7 V SSA 001aad789 8 V SSA V SSD 001aad790 V DDA ...

  • Page 15

    ... NXP Semiconductors Table 7. Pin TDA8932_2 Preliminary data sheet Internal circuitry …continued Symbol Equivalent circuit OSCREF HVPREF TEST DREF HVP2 HVP1 V DDP2 V SSP2 V SSP1 V DDP1 Rev. 02 — 12 December 2006 TDA8932 Class-D audio amplifier V DDA I ref 10 V 001aad792 SSA V DDA 11 V SSA ...

  • Page 16

    ... NXP Semiconductors Table 7. Pin TDA8932_2 Preliminary data sheet Internal circuitry …continued Symbol Equivalent circuit BOOT2 BOOT1 OUT2 OUT1 STAB2 STAB1 OSCIO Rev. 02 — 12 December 2006 TDA8932 Class-D audio amplifier 21, 28 OUT1, OUT2 001aad799 V DDP1, V DDP2 22 SSP1, V SSP2 001aad800 V DDA 24, 25 ...

  • Page 17

    ... NXP Semiconductors 10. Limiting values Table 8. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter ORM stg T amb P [ [2] Measured with respect to pin INREF; V [3] Measured with respect to pin V [4] Measured with respect to pin CGND [6] Current limiting concept. ...

  • Page 18

    ... NXP Semiconductors 12. Static characteristics Table 10. Static characteristics 320 kHz unless otherwise specified. P osc amb Symbol Parameter Supply V supply voltage P I supply current P I total quiescent current q(tot) Series resistance output power switches R drain-source on-state DSon resistance Power-up input: pin POWERUP ...

  • Page 19

    ... NXP Semiconductors Table 10. Static characteristics 320 kHz unless otherwise specified. P osc amb Symbol Parameter Amplifier outputs: pins OUT1 and OUT2 V output offset voltage O(offset) Stabilizer output: pins STAB1 and STAB2 V output voltage O Voltage protection V undervoltage protection P(uvp) supply voltage ...

  • Page 20

    ... NXP Semiconductors 13. Dynamic characteristics Table 11. Switching characteristics unless otherwise specified. P amb Symbol Parameter Internal oscillator f oscillator frequency osc Timing PWM output: pins OUT1 and OUT2 t rise time r t fall time f t minimum pulse width w(min) Table 12. SE characteristics kHz Symbol ...

  • Page 21

    ... NXP Semiconductors Table 12. SE characteristics …continued kHz Symbol Parameter V mute output voltage O(mute) CMRR common mode rejection ratio output power efficiency po [ the series resistance of inductor of low-pass LC filter in the application. s [2] Output power is measured indirectly; based on R [3] THD+N is measured in a bandwidth kHz, AES17 brick wall. ...

  • Page 22

    ... NXP Semiconductors Table 13. BTL characteristics kHz osc Symbol Parameter Z input impedance i V noise output voltage n(o) V mute output voltage O(mute) CMRR common mode rejection ratio output power efficiency po [ the series resistance of inductor of low-pass LC filter in the application. s [2] Output power is measured indirectly; based on R [3] THD+N is measured in a bandwidth kHz, AES17 brick wall ...

  • Page 23

    ... NXP Semiconductors 14. Application information 14.1 Output power estimation The output power P configuration can be estimated using SE configuration 0.5% BTL configuration 0.5% Where supply voltage load impedance [ ] L R DSon R = series resistance output inductor [ ] s R ESR t w(min oscillator frequency [Hz]; 320 kHz typical with R ...

  • Page 24

    ... NXP Semiconductors ( THD+N = 0.5 % Fig 7. SE output power as a function of supply voltage ( THD+N = 0.5 % Fig 8. BTL output power as a function of supply voltage TDA8932_2 Preliminary data sheet 001aad768 ( ( THD 001aad770 ( ( THD Rev. 02 — 12 December 2006 TDA8932 Class-D audio amplifi © NXP B.V. 2006. All rights reserved. ...

  • Page 25

    ... NXP Semiconductors 14.2 Output current limiting The peak output current I normal operation the output current should not exceed this threshold level otherwise the output signal is distorted. The peak output current BTL configurations can be estimated using SE configuration max BTL configuration: ...

  • Page 26

    ... NXP Semiconductors The 3 dB cut-off frequency is equal to – 3dB Where cut-off frequency [Hz] -3dB R = load impedance [ ] L Cse = single-ended capacitance [F]; see Table cut-off frequency. Table 15. Impedance ( ) 14.5 Gain reduction The gain of the TDA8932 is internally fixed for SE ( for BTL). The gain can be reduced by a resistive voltage divider at the input (see Fig 9. Input confi ...

  • Page 27

    ... NXP Semiconductors Where equivalent resistance [ ] parallel resistor [ ] Z = internal input impedance i Example: Substituting 4 results in a gain of G 14.6 Device synchronization If two or more TDA8932 devices are used in one application it is recommended that all devices are synchronized running at the same switching frequency to avoid beat tones. ...

  • Page 28

    ... NXP Semiconductors Equation 10 the thermal resistance from junction to ambient – Where: R th(j-a) T j(max ambient temperature amb P = power dissipation which is determined by the efficiency of the TDA8932 The power dissipation is shown in The thermal resistance as a function of the PCB area (35 m copper) is shown in Figure 11. ...

  • Page 29

    ... NXP Semiconductors Example 2 In case of music output power the rated power, the T • 1 • R th(j-a) The maximum junction temperature T 14.8 Pumping effects When the amplifier is used configuration, a so-called 'pumping effect' can occur. During one switching interval, energy is taken from one supply (e.g. V that energy is delivered back to the other supply line (e ...

  • Page 30

    ... NXP Semiconductors 14.9 SE curves measured in reference design 2 10 THD+N (%) (1) 10 ( kHz i ( 100 kHz i Fig 13. Total harmonic distortion-plus-noise as a function of output power 2 10 THD+N (%) 10 1 ( Fig 14. Total harmonic distortion-plus-noise as a function of frequency TDA8932_2 Preliminary data sheet 001aad772 2 10 THD+N (%) ( 001aad774 2 10 ...

  • Page 31

    ... NXP Semiconductors (dB) 30 (1) ( 100 mV (RMS Cse = 1000 ( ( Fig 15. Gain as a function of frequency 120 S/N (dB kHz brick-wall filter AES17 Fig 17. Signal-to-noise ratio as a function of output power TDA8932_2 Preliminary data sheet 001aad776 0 SVRR (dB 100 (Hz ripple Fig 16. Supply voltage ripple rejection as a function of ...

  • Page 32

    ... NXP Semiconductors 100 po (%) ( kHz ( kHz Fig 19. Output power efficiency as a function of output power 14.10 BTL curves measured in reference design 2 10 THD+N (%) ( kHz i ( kHz i ( 100 Hz i Fig 21. Total harmonic distortion-plus-noise as a function of output power TDA8932_2 Preliminary data sheet 001aad780 3.0 (2) (1) ...

  • Page 33

    ... NXP Semiconductors 2 10 THD+N (%) ( Fig 22. Total harmonic distortion-plus-noise as a function of frequency (dB 100 mV (RMS ( ( Fig 23. Gain as a function of frequency TDA8932_2 Preliminary data sheet 001aae114 2 10 THD+N (%) (Hz 001aae116 0 SVRR (dB) 20 (2) ( 100 (Hz ripple Fig 24. Supply voltage ripple rejection as a function of frequency Rev. 02 — 12 December 2006 TDA8932 Class-D audio amplifi ...

  • Page 34

    ... NXP Semiconductors kHz brick-wall filter AES17 Fig 25. Signal-to-noise ratio as a function of output power 100 po (1) (%) kHz ( kHz Fig 26. Output power efficiency as a function of output power TDA8932_2 Preliminary data sheet 120 S/N (dB) (2) ( 001aae119 3.0 P (W) 2.0 1 (W) o (1) V (2) V Fig 27. Power dissipation as a function of output power Rev. 02 — ...

  • Page 35

    ... NXP Semiconductors 14.11 Typical application schematics (simplified) Rvdda VP 10 GND Cin 470 nF MUTE control Cen 470 nF SLEEP control Cosc 100 nF Rosc 39 k Chvpref Chvp 47 F (25 V) 100 nF Cin 470 nF Fig 28. Typical simplified application diagram for 2 TDA8932_2 Preliminary data sheet ...

  • Page 36

    ... NXP Semiconductors Rvdda VP 10 GND Cin Cin MUTE Cen control 470 nF SLEEP control Cosc 100 nF Rosc 39 k Chvp 100 nF Fig 29. Typical simplified application diagram for 1 TDA8932_2 Preliminary data sheet VP VPA Cvdda Cvddp 100 nF 220 F ( SSD(HW) SSD(HW IN1P OSCIO 2 31 IN1N ...

  • Page 37

    ... NXP Semiconductors Rvdda VDD 10 GND Rvssa VSS 10 Cin 470 nF MUTE control Cen 470 nF SLEEP control Cosc 100 nF Rosc VSSA 39 k Cin 470 nF Fig 30. Typical simplified application diagram for 2 TDA8932_2 Preliminary data sheet VDD VDDA Cvddp Cvdda 220 F 100 nF (25 V) Cvssp ...

  • Page 38

    ... NXP Semiconductors Rvdda VDD 10 GND Rvssa VSS 10 Cin Cin MUTE control SLEEP control Cosc 100 nF Rosc VSSA 39 k Fig 31. Typical simplified application diagram for 1 15. Test information 15.1 Quality information The General Quality Specification for Integrated Circuits, SNW-FQ-611 is applicable. ...

  • Page 39

    ... NXP Semiconductors 16. Package outline SO32: plastic small outline package; 32 leads; body width 7 pin 1 index 1 e DIMENSIONS (inch dimensions are derived from the original mm dimensions) A UNIT max. 0.3 2.45 mm 2.65 0.25 0.1 2.25 0.012 0.096 inches 0.1 0.01 0.004 0.089 Note 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. ...

  • Page 40

    ... NXP Semiconductors 17. Soldering This text provides a very brief insight into a complex technology. A more in-depth account of soldering ICs can be found in Application Note AN10365 “Surface mount reflow soldering description” . 17.1 Introduction to soldering Soldering is one of the most common methods through which packages are attached to Printed Circuit Boards (PCBs), to form electrical circuits ...

  • Page 41

    ... NXP Semiconductors 17.4 Reflow soldering Key characteristics in reflow soldering are: • Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to higher minimum peak temperatures (see reducing the process window • Solder paste printing issues including smearing, release, and adjusting the process window for a mix of large and small components on one board • ...

  • Page 42

    ... NXP Semiconductors Fig 33. Temperature profiles for large and small components For further information on temperature profiles, refer to Application Note AN10365 “Surface mount reflow soldering description” . 18. Abbreviations Table 18. Acronym BTL DMOS ESD PWM OCP OTP OVP SE UBP UVP TF WP TDA8932_2 ...

  • Page 43

    ... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number TDA8932TW has been deleted • Two new symbols and parameters in • Minor adaptions in application diagrams ...

  • Page 44

    ... For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail ...

  • Page 45

    ... NXP Semiconductors 22. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 5 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 6 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Pinning information . . . . . . . . . . . . . . . . . . . . . . 4 7.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 Functional description . . . . . . . . . . . . . . . . . . . 6 8.1 General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8.2 Mode selection and interfacing . . . . . . . . . . . . . 6 8.3 Pulse width modulation frequency . . . . . . . . . . 7 8 ...