STD13NM60N STMicroelectronics, STD13NM60N Datasheet - Page 11
STD13NM60N
Manufacturer Part Number
STD13NM60N
Description
MOSFET N-CH 600V 11A DPAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STF13NM60N.pdf
(21 pages)
Specifications of STD13NM60N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
360 mOhm @ 5.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
790pF @ 50V
Power - Max
90W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.36 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
11 A
Power Dissipation
90 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8773-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STD13NM60N
Manufacturer:
SAMSUNG
Quantity:
1 469
Part Number:
STD13NM60N
Manufacturer:
ST
Quantity:
20 000
STB/D/F/I/P/W13NM60N
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
®
packages, depending on their level of environmental compliance. ECOPACK
Doc ID 15420 Rev 3
Package mechanical data
11/21
®