STD13NM60N STMicroelectronics, STD13NM60N Datasheet - Page 5

• Manufacturer Part Number: STD13NM60N
• Description: MOSFET N-CH 600V 11A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD13NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 360 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 790pF @ 50V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.36 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 11 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8773-2

STB/D/F/I/P/W13NM60N
2
Electrical characteristics
(T
Table 5.
Table 6.
1. C
C
V
Symbol
Symbol
R
CASE
V
oss eq.
(BR)DSS
I
increases from 0 to 80% V
I
C
GS(th)
DS(on)
C
C
Q
Q
DSS
GSS
R
Q
oss eq.
oss
rss
iss
gs
gd
G
g
= 25 °C unless otherwise specified)
(1)
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
DS
GS
= 0)
Doc ID 15420 Rev 3
I
V
V
V
V
V
V
V
V
V
V
(see Figure 19)
f=1 MHz open drain
D
DS
DS
GS
DS
GS
GS
GS
GS
DS
DD
= 1 mA, V
= Max rating
= Max rating, @125 °C
= ± 25 V
= V
= 10 V, I
= 50 V, f = 1 MHz,
= 0
= 0, V
= 480 V, I
= 10 V,
Test conditions
Test conditions
GS
, I
DS
GS
D
D
= 0 to 480 V
= 250 µA
D
= 5.5 A
= 0
= 11 A,
Electrical characteristics
Min. Typ.
600
Min.
2
-
-
-
-
0.28
Typ.
790
135
3.6
4.7
3
60
30
15
4
oss
when V
Max. Unit
0.36
100
Max. Unit
0.1
1
4
-
-
-
-
DS
µA
µA
µA
nC
nC
nC
V
V
pF
pF
pF
pF
Ω
5/21
Ω