STD13NM60N STMicroelectronics, STD13NM60N Datasheet - Page 8

• Manufacturer Part Number: STD13NM60N
• Description: MOSFET N-CH 600V 11A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD13NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 360 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 790pF @ 50V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.36 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 11 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8773-2

Electrical characteristics
8/21
Figure 8.
Figure 10. Output characteristics
Figure 12. Normalized B
(norm)
BV
1.03
0.99
0.97
1.07
1.01
0.95
0.93
1.05
DSS
-50
Safe operating area for DPAK
-25
0
25
I
D
50
VDSS
=1mA
75
vs temperature
100
125
Doc ID 15420 Rev 3
T
AM03308v1
J
(°C)
Figure 9.
Figure 11. Transfer characteristics
Figure 13. Static drain-source on resistance
R
DS(on)
0.30
0.28
0.24
0.22
0.26
(Ω)
0.2
0
Thermal impedance for DPAK
2
V
I
D
GS
=5.5A
4
=10V
STB/D/F/I/P/W13NM60N
6
8
10
I
D
AM03302v1
(A)