STD13NM60N STMicroelectronics, STD13NM60N Datasheet - Page 14
STD13NM60N
Manufacturer Part Number
STD13NM60N
Description
MOSFET N-CH 600V 11A DPAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STF13NM60N.pdf
(21 pages)
Specifications of STD13NM60N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
360 mOhm @ 5.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
790pF @ 50V
Power - Max
90W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.36 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
11 A
Power Dissipation
90 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8773-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STD13NM60N
Manufacturer:
SAMSUNG
Quantity:
1 469
Part Number:
STD13NM60N
Manufacturer:
ST
Quantity:
20 000
Package mechanical data
14/21
Dim
A1
b1
c2
e1
L1
L2
A
D
E
b
c
e
L
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
3.50
1.27
Min
10
13
Doc ID 15420 Rev 3
I²PAK (TO-262) mechanical data
mm
Typ
10.40
Max
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
3.93
1.40
14
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
Min
STB/D/F/I/P/W13NM60N
inch
Typ
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.551
0.154
0.055
0.410
Max