STD13NM60N STMicroelectronics, STD13NM60N Datasheet - Page 7

• Manufacturer Part Number: STD13NM60N
• Description: MOSFET N-CH 600V 11A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD13NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 360 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 790pF @ 50V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.36 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 11 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8773-2

STB/D/F/I/P/W13NM60N
2.1
Figure 2.
Figure 4.
Figure 6.
0.01
0.1
0.1
0.1
(A)
(A)
(A)
10
10
10
I
I
I
D
D
D
1
1
1
0.1
0.1
0.1
Electrical characteristics (curves)
Safe operating area for TO-220,
I²PAK and D²PAK
Safe operating area for TO-247
Safe operating area for TO-220FP
1
1
1
Tc=25°C
Tj=150°C
Sinlge
pulse
10
10
10
Tc=25°C
Tj=150°C
Sinlge
pulse
Tj=150°C
Tc=25°C
Single pulse
100
100
100
V
V
V
DS
DS
DS
(V)
(V)
(V)
Doc ID 15420 Rev 3
100µs
100µs
100µs
AM03258v1
10µs
1ms
10ms
10µs
1ms
10ms
AM03259v1
10µs
1ms
10ms
AM03983v1
Figure 3.
Figure 5.
Figure 7.
Thermal impedance for TO-220,
I²PAK and D²PAK
Thermal impedance for TO-247
Thermal impedance for TO-220FP
Electrical characteristics
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