2N7000_D75Z Fairchild Semiconductor, 2N7000_D75Z Datasheet - Page 3

• Manufacturer Part Number: 2N7000_D75Z
• Description: MOSFET N-CH 60V 200MA TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of 2N7000_D75Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 200mA
• Vgs(th) (max) @ Id: 3V @ 1mA
• Input Capacitance (ciss) @ Vds: 50pF @ 25V
• Power - Max: 400mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.1 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.2 A
• Power Dissipation: 400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Note:
Electrical Characteristics
Symbol
ON CHARACTERISTICS Continued
I
g
DYNAMIC CHARACTERISTICS
C
C
C
t
t
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
I
V
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
D(ON)
on
off
S
SM
FS
SD
iss
oss
rss
Parameter
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
T
(Note 1)
A
= 25
o
C unless otherwise noted
Conditions
V
V
V
V
V
V
V
V
I
R
V
I
R
V
I
R
V
I
R
V
V
f = 1.0 MHz
D
D
D
D
GS
GS
GS
DS
DS
DS
DS
DD
GEN
DD
GEN
DD
GEN
DD
GEN
GS
GS
= 500 mA, V
= 200 mA, V
= 500 mA, V
= 200 mA, V
= 4.5 V, V
= 10 V, V
= 10 V, V
= 10 V, I
> 2 V
> 2 V
= 25 V, V
= 15 V, R
= 30 V, R
= 15 V, R
= 30 V, R
= 0 V, I
= 0 V, I
= 25
= 25
= 25
= 25
DS(on)
DS(on)
S
S
D
= 115 mA
= 400 mA
L
L
L
L
DS
DS
GS
= 200 mA
, I
, I
DS
GS
GS
GS
GS
= 25
= 150
= 25
= 150
D
D
> 2 V
> 2 V
= 0 V,
= 10 V
= 10 V,
= 10 V,
= 10 V,
= 10 V,
= 200 mA
= 200 mA
,
,
DS(on)
DS(on)
,
,
(Note 1)
(Note 1)
NDS7002A
NDS7002A
NDS7002A
NDS7002
NDS7002A
NDS7002A
NDS7002
2N7000
2N7002
2N7000
2N7002
2N7000
2N7000
2N7002
2N7002
2N7002
2N700
2N700
Typ e
All
All
All
2
2
A
A
Min
500
500
100
75
80
80
2700
2700
0.88
0.88
Typ
600
320
320
320
20
11
4
Max
115
280
0.8
1.5
1.5
1.2
50
25
10
20
10
20
5
2N7000.SAM Rev. A1
Units
mA
mS
mA
ns
ns
A
V
pF
pF
pF