HUF76619D3ST Fairchild Semiconductor

HUF76619D3ST

Manufacturer Part Number

HUF76619D3ST

Description

MOSFET N-CH 100V 18A DPAK

Manufacturer

Fairchild Semiconductor

Series

UltraFET™r

Specifications of HUF76619D3ST

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

85 mOhm @ 18A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

18A

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

29nC @ 10V

Input Capacitance (ciss) @ Vds

767pF @ 25V

Power - Max

75W

Mounting Type

Surface Mount

Package / Case

DPak, TO-252 (2 leads+tab), SC-63

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.065 Ohms

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

+/- 16 V

Continuous Drain Current

18 A

Power Dissipation

75 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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