M29DW128G70NF6E NUMONYX, M29DW128G70NF6E Datasheet - Page 36
Manufacturer Part Number
P7ED TSOP56 DUAL BANK
Enhanced buffered program commands
Data Add Data Add Data Add Data
1. Only available from week 8 of 2008.
2. BAd any address in the block.
Blocks can be protected individually against accidental program, erase or read operations.
The device block protection scheme is shown in
Table 11: Block protection commands
The memory block and extended memory block protection is configured through the Lock
Section 8.1: Lock
Enter Extended Memory Block command
The M29DW128G has one extra 256-word block (extended memory block) that can only be
accessed using the Enter Extended Memory Block command.
The extended memory block is divided in two memory areas of 128 words each: the first one
is factory locked and the second one is customer lockable.
Three Bus Write cycles are required to issue the Extended Memory Block command. Once
the command has been issued the device enters the extended memory block mode where
all bus read or program operations are conducted on the extended memory block. Once the
device is in the extended block mode, the extended memory block is addressed by using the
addresses occupied by the first boot block in the other operating modes (see
The device remains in extended memory block mode until the Exit Extended Memory Block
command is issued or power is removed from the device. After power-up or hardware reset,
the device reverts to read mode where the commands issued to the first boot block address
space will address the first boot block.
The extended memory block cannot be erased, and can be treated as one-time
programmable (OTP) memory.
In extended block mode only array cell locations (bank A) with the same addresses as the
extended block are not accessible. In extended block mode dual operations are allowed and
Bus write operations
Figure 5: Software protection
for a summary of the block protection commands.
Table 31: Block