PBSS4120T,215 NXP Semiconductors, PBSS4120T,215 Datasheet - Page 2

• Manufacturer Part Number: PBSS4120T,215
• Description: TRANS NPN 20V 1A SOT23
• Manufacturer: NXP Semiconductors

Specifications of PBSS4120T,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 50mA, 1A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 500mA, 2V
• Power - Max: 480mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 300
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 1 A
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 300 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4342-2; 934057984215; PBSS4120T T/R; PBSS4120T T/R

NXP Semiconductors
FEATURES
• Low collector-emitter saturation voltage V
• High collector current capability I
• High efficiency leading to less heat generation
• Reduced printed-circuit board requirements
• Cost effective alternative to MOSFETs in specific
APPLICATIONS
• Power management
• Peripheral driver
DESCRIPTION
NPN BISS transistor in a SOT23 plastic package providing
ultra low V
PNP complement: PBSS5120T.
MARKING
Note
1. * = p: made in Hong Kong.
ORDERING INFORMATION
2003 Sep 29
PBSS4120T
PBSS4120T
applications.
– DC/DC conversion
– Supply line switching
– Battery charger
– LCD backlighting.
– Driver in low supply voltage applications (e.g. lamps
– Inductive load drivers (e.g. relays, buzzers and
20 V, 1 A
NPN low V
* = t: made in Malaysia.
* = W: made in China.
and LEDs)
motors).
TYPE NUMBER
TYPE NUMBER
CEsat
and R
CEsat
CEsat
parameters.
(BISS) transistor
−
MARKING CODE
NAME
C
and I
*3B
CM
CEsat
plastic surface mounted package; 3 leads
(1)
2
QUICK REFERENCE DATA
PINNING
handbook, halfpage
V
I
I
R
SYMBOL
C
CM
CEO
CEsat
PIN
DESCRIPTION
1
2
3
Fig.1 Simplified outline (SOT23) and symbol.
PACKAGE
Top view
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
base
emitter
collector
1
PARAMETER
3
DESCRIPTION
2
MAM255
PBSS4120T
Product data sheet
1
20
1
3
200
MAX.
VERSION
SOT23
3
2
V
A
A
mΩ
UNIT