PBSS4120T,215 NXP Semiconductors, PBSS4120T,215 Datasheet - Page 3

• Manufacturer Part Number: PBSS4120T,215
• Description: TRANS NPN 20V 1A SOT23
• Manufacturer: NXP Semiconductors

Specifications of PBSS4120T,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 50mA, 1A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 500mA, 2V
• Power - Max: 480mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 300
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 1 A
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 300 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4342-2; 934057984215; PBSS4120T T/R; PBSS4120T T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2003 Sep 29
V
V
V
I
I
I
P
T
T
T
R
SYMBOL
SYMBOL
C
CM
BM
stg
j
amb
CBO
CEO
EBO
tot
20 V, 1 A
NPN low V
th j-a
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
CEsat
PARAMETER
(BISS) transistor
PARAMETER
open emitter
open base
open collector
T
T
amb
amb
≤ 25 °C; note 1
≤ 25 °C; note 2
in free air; note 1
in free air; note 2
3
CONDITIONS
CONDITIONS
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
VALUE
417
260
30
20
5
1
3
300
300
480
+150
150
+150
PBSS4120T
MAX.
Product data sheet
UNIT
K/W
K/W
V
V
V
A
A
mA
mW
mW
°C
°C
°C
UNIT
2
2
.
.