PBSS4120T,215 NXP Semiconductors, PBSS4120T,215 Datasheet - Page 5

• Manufacturer Part Number: PBSS4120T,215
• Description: TRANS NPN 20V 1A SOT23
• Manufacturer: NXP Semiconductors

Specifications of PBSS4120T,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 50mA, 1A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 500mA, 2V
• Power - Max: 480mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 300
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 1 A
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 300 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4342-2; 934057984215; PBSS4120T T/R; PBSS4120T T/R

NXP Semiconductors
PACKAGE OUTLINE
2003 Sep 29
Plastic surface mounted package; 3 leads
20 V, 1 A
NPN low V
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT23
1.1
0.9
A
max.
A
0.1
1
1
CEsat
0.48
0.38
b
p
IEC
(BISS) transistor
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
JEDEC
1.4
1.2
E
REFERENCES
0
2
1.9
e
w
B
0.95
M
e
1
scale
B
EIAJ
1
5
2.5
2.1
H
E
0.45
0.15
L
A
p
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
detail X
PROJECTION
0.1
EUROPEAN
w
L p
A
Q
PBSS4120T
c
Product data sheet
X
v
ISSUE DATE
M
97-02-28
99-09-13
A
SOT23