PBSS4120T,215 NXP Semiconductors, PBSS4120T,215 Datasheet - Page 7

• Manufacturer Part Number: PBSS4120T,215
• Description: TRANS NPN 20V 1A SOT23
• Manufacturer: NXP Semiconductors

Specifications of PBSS4120T,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 50mA, 1A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 500mA, 2V
• Power - Max: 480mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 300
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 1 A
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 300 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4342-2; 934057984215; PBSS4120T T/R; PBSS4120T T/R

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NXP Semiconductors
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This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
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R75/01/pp7
Date of release: 2003 Sep 29
Document order number: 9397 750 11896