PBSS4120T,215 NXP Semiconductors, PBSS4120T,215 Datasheet - Page 4

• Manufacturer Part Number: PBSS4120T,215
• Description: TRANS NPN 20V 1A SOT23
• Manufacturer: NXP Semiconductors

Specifications of PBSS4120T,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 50mA, 1A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 500mA, 2V
• Power - Max: 480mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 300
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 1 A
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 300 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4342-2; 934057984215; PBSS4120T T/R; PBSS4120T T/R

NXP Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2003 Sep 29
I
I
h
V
R
V
V
f
C
SYMBOL
amb
CBO
EBO
T
FE
CEsat
BEsat
BEon
20 V, 1 A
NPN low V
CEsat
c
= 25 °C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
p
≤ 300 μs; δ ≤ 0.02.
CEsat
PARAMETER
(BISS) transistor
V
V
V
V
V
V
I
I
I
I
I
I
V
I
f = 100 MHz
V
f = 1 MHz
C
C
C
C
C
C
C
CB
CB
EB
CE
CE
CE
CE
CB
= 100 mA; I
= 500 mA; I
= 750 mA; I
= 1 A; I
= 500 mA; I
= 1 A; I
= 100 mA; V
= 4 V; I
= 30 V; I
= 30 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 10 V; I
4
CONDITIONS
B
B
= 50 mA; note 1
= 100 mA; note 1
C
C
C
C
C
E
E
E
= 0
= 100 mA
= 500 mA
= 1 A
= 100 mA
B
B
B
B
= 0
= 0; T
= I
CE
= 1 mA
= 50 mA
= 15 mA
= 50 mA; note 1 −
e
= 10 V;
= 0;
j
= 150 °C
−
−
−
350
300
280
−
−
−
−
−
−
100
−
MIN.
−
−
−
470
450
420
−
−
−
−
−
−
−
−
−
TYP.
PBSS4120T
Product data sheet
100
50
100
−
−
−
80
110
200
250
220
1.1
0.75
−
20
MAX.
nA
μA
nA
mV
mV
mV
mV
mΩ
V
V
MHz
pF
UNIT