PBSS302NZ,135 NXP Semiconductors, PBSS302NZ,135 Datasheet - Page 3

• Manufacturer Part Number: PBSS302NZ,135
• Description: TRANS NPN 20V 5.8A SOT-223
• Manufacturer: NXP Semiconductors

Specifications of PBSS302NZ,135

• Transistor Type: NPN
• Current - Collector (ic) (max): 5.8A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 290mA, 5.8A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 2A, 2V
• Power - Max: 2W
• Frequency - Transition: 140MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 568-4179-2; 934059043135; PBSS302NZ /T3; PBSS302NZ /T3

NXP Semiconductors
5. Limiting values
PBSS302NZ_2
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Symbol
V
V
V
I
I
P
T
T
T
C
CM
Fig 1.
j
amb
stg
CBO
CEO
EBO
tot
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Device mounted on a ceramic PCB, Al
(1) Ceramic PCB, Al
(2) FR4 PCB, mounting pad for collector 6 cm
(3) FR4 PCB, standard footprint
Power derating curves
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
total power dissipation
junction temperature
ambient temperature
storage temperature
Rev. 02 — 20 November 2009
P
(W)
tot
2
2.5
2.0
1.5
1.0
0.5
O
0
3
−75
, standard footprint
(1)
(2)
(3)
−25
2
O
3
Conditions
open emitter
open base
open collector
single pulse;
t
T
, standard footprint.
p
amb
≤ 1 ms
25
≤ 25 °C
20 V, 5.8 A NPN low V
2
75
125
T
006aaa560
amb
[1]
[2]
[3]
(°C)
175
Min
-
-
-
-
-
-
-
-
-
−65
−65
PBSS302NZ
CEsat
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
Max
20
20
5
5.8
11.6
0.7
1.7
2
150
+150
+150
Unit
V
V
V
A
A
W
W
W
°C
°C
°C
2
.
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