TRANS PNP 20V 5.1A SOT-89

PBSS302PX,115

Manufacturer Part NumberPBSS302PX,115
DescriptionTRANS PNP 20V 5.1A SOT-89
ManufacturerNXP Semiconductors
PBSS302PX,115 datasheet
 


Specifications of PBSS302PX,115

Package / CaseSC-62, SOT-89, TO-243 (3 Leads + Tab)Transistor TypePNP
Current - Collector (ic) (max)5.1AVoltage - Collector Emitter Breakdown (max)20V
Vce Saturation (max) @ Ib, Ic230mV @ 255mA, 5.1ADc Current Gain (hfe) (min) @ Ic, Vce200 @ 2A, 2V
Power - Max2.1WFrequency - Transition130MHz
Mounting TypeSurface MountMinimum Operating Temperature- 65 C
ConfigurationSingleTransistor PolarityPNP
Mounting StyleSMD/SMTCollector- Emitter Voltage Vceo Max20 V
Emitter- Base Voltage Vebo5 VMaximum Dc Collector Current5.1 A
Power Dissipation2100 mWMaximum Operating Frequency130 MHz (Typ)
Maximum Operating Temperature+ 150 CLead Free Status / RoHS StatusLead free / RoHS Compliant
Current - Collector Cutoff (max)-Other names568-4174-2
934059015115
PBSS302PX T/R
PBSS302PX T/R
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PBSS302PX
20 V, 5.1 A PNP low V
Rev. 02 — 20 November 2009
1. Product profile
1.1 General description
PNP low V
(SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS302NX.
1.2 Features
Low collector-emitter saturation voltage V
High collector current capability I
High collector current gain (h
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
DC-to-DC conversion
MOSFET gate driving
Motor control
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Symbol Parameter
V
collector-emitter voltage
CEO
I
collector current
C
I
peak collector current
CM
R
collector-emitter
CEsat
saturation resistance
[1]
Pulse test: t
(BISS) transistor
CEsat
Breakthrough In Small Signal (BISS) transistor in a SOT89
CEsat
and I
C
CM
) at high I
FE
Quick reference data
Conditions
open base
single pulse;
≤ 1 ms
t
p
= −4 A;
I
C
= −200 mA
I
B
≤ 300 μs; δ ≤ 0.02.
p
Product data sheet
CEsat
C
Min
Typ
Max
−20
-
-
−5.1
-
-
−10.2
-
-
[1]
-
32
48
Unit
V
A
A

PBSS302PX,115 Summary of contents

  • Page 1

    PBSS302PX 20 V, 5.1 A PNP low V Rev. 02 — 20 November 2009 1. Product profile 1.1 General description PNP low V (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS302NX. 1.2 Features Low collector-emitter ...

  • Page 2

    ... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PBSS302PX 4. Marking Table 4. Type number PBSS302PX [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PBSS302PX_2 Product data sheet 20 V, 5.1 A PNP low V Pinning Description emitter collector base Ordering information ...

  • Page 3

    ... NXP Semiconductors 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot amb T stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm ...

  • Page 4

    ... NXP Semiconductors 6. Thermal characteristics Table 6. Symbol R th(j-a) R th(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm [3] Device mounted on a ceramic PCB th(j-a) (K/W) δ 0.75 ...

  • Page 5

    ... NXP Semiconductors 2 10 δ 0.75 Z th(j-a) 0.50 (K/W) 0.33 0.20 10 0.10 0.05 0.02 0. −1 10 −5 − FR4 PCB, mounting pad for collector 6 cm Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 2 10 δ 0.75 th(j-a) (K/W) ...

  • Page 6

    ... NXP Semiconductors 7. Characteristics Table 7. ° amb Symbol Parameter I collector-base cut-off CBO current I emitter-base cut-off EBO current h DC current gain FE V collector-emitter CEsat saturation voltage R collector-emitter CEsat saturation resistance V base-emitter BEsat saturation voltage V base-emitter turn-on BEon voltage t delay time d t rise time ...

  • Page 7

    ... NXP Semiconductors 1000 h FE 800 (1) 600 400 (2) (3) 200 0 −1 −10 −1 −10 −10 = − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 5. DC current gain as a function of collector current; typical values −1 (V) −0.8 (1) (2) −0.4 (3) 0 −1 − ...

  • Page 8

    ... NXP Semiconductors −1 V CEsat (V) −1 −10 (1) (2) −2 −10 (3) −3 −10 −1 −10 −1 −10 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values CEsat (Ω) 10 (1) (2) 1 (3) − ...

  • Page 9

    ... NXP Semiconductors 8. Test information − − Fig 13. BISS transistor switching time definition V Fig 14. Test circuit for switching times PBSS302PX_2 Product data sheet 20 V, 5.1 A PNP low (probe) oscilloscope 450 Ω −12 − −0. Bon Boff Rev. 02 — 20 November 2009 PBSS302PX (BISS) transistor ...

  • Page 10

    ... NXP Semiconductors 9. Package outline Fig 15. Package outline SOT89 (SC-62/TO-243) 10. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PBSS302PX [1] For further information and the availability of packing methods, see PBSS302PX_2 Product data sheet 20 V, 5.1 A PNP low V 4 ...

  • Page 11

    ... NXP Semiconductors 11. Soldering 0.85 1.20 4.60 1.20 Fig 16. Reflow soldering footprint SOT89 (SC-62) Not recommended for wave soldering Fig 17. Wave soldering footprint SOT89 (SC-62) PBSS302PX_2 Product data sheet 4.75 2.25 2.00 1.90 1.20 0.20 1. (3x) 3.70 3.95 6.60 2. 1.50 ...

  • Page 12

    ... NXP Semiconductors 12. Mounting 40 mm 3.96 mm PCB thickness: FR4 PCB = 1.6 mm ceramic PCB = 0.635 mm Fig 18. FR4 PCB, standard footprint; ceramic PCB, Al footprint SOT89 (SC-62) PBSS302PX_2 Product data sheet 1.6 mm 001aaa234 O , standard 2 3 Rev. 02 — 20 November 2009 PBSS302PX 20 V, 5.1 A PNP low V ...

  • Page 13

    ... Document ID Release date PBSS302PX_2 20091120 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 15 “Package outline SOT89 • Figure 16 “Reflow soldering footprint SOT89 • ...

  • Page 14

    ... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

  • Page 15

    ... NXP Semiconductors 16. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 11 Soldering ...