TRANS PNP 20V 5.1A SOT-89

PBSS302PX,115

Manufacturer Part NumberPBSS302PX,115
DescriptionTRANS PNP 20V 5.1A SOT-89
ManufacturerNXP Semiconductors
PBSS302PX,115 datasheet
 


Specifications of PBSS302PX,115

Package / CaseSC-62, SOT-89, TO-243 (3 Leads + Tab)Transistor TypePNP
Current - Collector (ic) (max)5.1AVoltage - Collector Emitter Breakdown (max)20V
Vce Saturation (max) @ Ib, Ic230mV @ 255mA, 5.1ADc Current Gain (hfe) (min) @ Ic, Vce200 @ 2A, 2V
Power - Max2.1WFrequency - Transition130MHz
Mounting TypeSurface MountMinimum Operating Temperature- 65 C
ConfigurationSingleTransistor PolarityPNP
Mounting StyleSMD/SMTCollector- Emitter Voltage Vceo Max20 V
Emitter- Base Voltage Vebo5 VMaximum Dc Collector Current5.1 A
Power Dissipation2100 mWMaximum Operating Frequency130 MHz (Typ)
Maximum Operating Temperature+ 150 CLead Free Status / RoHS StatusLead free / RoHS Compliant
Current - Collector Cutoff (max)-Other names568-4174-2
934059015115
PBSS302PX T/R
PBSS302PX T/R
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NXP Semiconductors
2
10
δ = 1
0.75
Z
th(j-a)
0.50
(K/W)
0.33
0.20
10
0.10
0.05
0.02
0.01
1
0
−1
10
−5
−4
10
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10
FR4 PCB, mounting pad for collector 6 cm
Fig 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
2
10
δ = 1
Z
0.75
th(j-a)
(K/W)
0.50
0.33
0.20
10
0.10
0.05
0.02
0.01
1
0
−1
10
−5
−4
10
10
10
Ceramic PCB, Al
O
, standard footprint
2
3
Fig 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS302PX_2
Product data sheet
−3
−2
−1
10
10
2
−3
−2
−1
10
10
Rev. 02 — 20 November 2009
PBSS302PX
20 V, 5.1 A PNP low V
(BISS) transistor
CEsat
006aaa558
2
1
10
10
t
(s)
p
006aaa559
2
1
10
10
t
(s)
p
© NXP B.V. 2009. All rights reserved.
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