2N7052_D74Z Fairchild Semiconductor, 2N7052_D74Z Datasheet - Page 2

• Manufacturer Part Number: 2N7052_D74Z
• Description: TRANSISTOR DARL NPN 100V TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of 2N7052_D74Z

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 1.5A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Current - Collector Cutoff (max): 200nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 1000 @ 1A, 5V
• Power - Max: 625mW
• Frequency - Transition: 200MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 100V
• Collector-base Voltage(max): 100V
• Emitter-base Voltage (max): 12V
• Collector-emitter Saturation Voltage: 1.5@0.1mA@100mAV
• Collector Current (dc) (max): 1.5A
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-92
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 12 V
• Collector- Base Voltage Vcbo: 100 V
• Maximum Dc Collector Current: 1.5 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 1000
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

OFF CHARACTERISTICS
ON CHARACTERISTICS*
SMALL SIGNAL CHARACTERISTICS
V
V
V
I
I
I
h
V
V
F
C
Symbol
CBO
CES
EBO
FE
T
(BR)CEO
(BR)CBO
(BR)EBO
CE(
BE(
cb
Electrical Characteristics
*
Typical Characteristics
Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 1.0%
on
sat
100
)
)
80
60
40
20
0.001
0
Typical Pulsed Current Gain
125 °C
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Collector-Cutoff Current
Emitter-Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Transition Frequency
Collector-Base Capacitance
vs Collector Current
I - COLLECTOR CURRENT (A)
C
0.01
Parameter
25 °C
0.1
- 40°C
TA = 25°C unless otherwise noted
I
I
I
V
V
V
I
I
I
I
I
V
1
C
C
E
C
C
C
C
C
CB
CE
EB
CB
= 1.0 mA, I
= 100 A, I
= 1.0 mA, I
= 100 mA, V
= 1.0 A, V
= 100 mA, I
= 100 mA, V
= 100 mA, V
= 80 V, I
= 80 V, I
= 7.0 V, I
= 10 V,f = 1.0 MHz 2N7052
Test Conditions
1.6
1.2
0.8
0.4
CE
E
E
B
C
C
E
2
0
B
= 0
= 0
10
CE
BE
CE
= 0
= 0
= 0
= 5.0 V
= 0
= 0.1 mA
= 5.0 V
= 5.0 V
= 5.0 V,
Collector-Emitter Saturation
Voltage vs Collector Current
= 1000
I - COLLECTOR CURRENT (mA)
2N7053
NPN Darlington Transistor
25 °C
C
P 06
10,000
1,000
Min
100
100
100
200
12
- 40°C
125 °C
20,000
Max
0.1
0.2
0.1
1.5
2.0
8.0
10
(continued)
Units
MHz
1000
pF
V
V
V
V
V
A
A
A