MPSA64_D75Z Fairchild Semiconductor, MPSA64_D75Z Datasheet - Page 2

• Manufacturer Part Number: MPSA64_D75Z
• Description: TRANS DARL PNP 30V 1.2A TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of MPSA64_D75Z

• Transistor Type: PNP - Darlington
• Current - Collector (ic) (max): 1.2A
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 100mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 125MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

OFF CHARACTERISTICS
ON CHARACTERISTICS*
SMALL SIGNAL CHARACTERISTICS
V
I
I
h
V
V
f
Symbol
CBO
EBO
T
*
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
FE
(BR)CES
CE(
BE(
Electrical Characteristics
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
Typical Characteristics
on
sat
50
40
30
20
10
)
)
0
0.01
Typical Pulsed Current Gain
V
CE
Collector-Emitter Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain - Bandwidth Product
= 5V
- 40 °C
vs Collector Current
I - COLLECTOR CURRENT (A)
C
25 °C
125 °C
Parameter
0.1
TA = 25°C unless otherwise noted
I
V
V
I
I
I
I
I
f = 100 MHz
1
C
C
C
C
C
C
CB
EB
= 100 A, I
= 10 mA, V
= 100 mA, V
= 100 mA, I
= 100 mA, V
= 10 mA, V
= 30 V, I
= 10 V, I
Test Conditions
E
C
1.6
1.2
0.8
0.4
B
CE
CE
0.001
B
0
= 0
= 0
CE
CE
= 0
= 0.1 mA
= 5.0 V
= 5.0 V,
= 5.0 V
= 5.0 V
Voltage vs Collector Current
Collector-Emitter Saturation
= 1000
- 40 °C
PNP Darlington Transistor
I - COLLECTOR CURRENT (A)
C
0.01
25 °C
10,000
20,000
Min
125
30
0.1
Max
125 °C
100
100
1.5
2.0
(continued)
Units
MHz
nA
nA
V
V
V
1
3