MT47H128M8HQ-187E:E Micron Technology Inc, MT47H128M8HQ-187E:E Datasheet - Page 96

• Manufacturer Part Number: MT47H128M8HQ-187E:E
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H128M8HQ-187E:E

• Organization: 128Mx8
• Density: 1Gb
• Address Bus: 17b
• Access Time (max): 350ps
• Maximum Clock Rate: 1.066GHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 210mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Figure 45: Consecutive READ Bursts
PDF: 09005aef821ae8bf
Rev. O 9/08 EN
Notes:
DQS, DQS#
DQS, DQS#
Command
Command
Address
Address
1. DO n (or b) = data-out from column n (or column b).
2. BL = 4.
3. Three subsequent elements of data-out appear in the programmed order following
4. Three subsequent elements of data-out appear in the programmed order following
5. Shown with nominal
6. Example applies only when READ commands are issued to same device.
CK#
CK#
DQ
DQ
CK
CK
DO n.
DO b.
READ
READ
Bank,
Bank,
Col n
Col n
T0
T0
t CCD
RL = 3
t CCD
NOP
NOP
T1
T1
RL = 4
t
AC,
96
t
DQSCK, and
READ
READ
Bank,
Bank,
Col b
Col b
T2
T2
T2n
Micron Technology, Inc. reserves the right to change products or specifications without notice.
NOP
NOP
t
T3
T3
DQSQ.
DO
n
1Gb: x4, x8, x16 DDR2 SDRAM
T3n
T3n
NOP
NOP
T4
T4
DO
n
Transitioning Data
T4n
T4n
NOP
NOP
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T5
T5
DO
b
T5n
T5n
T6
NOP
T6
NOP
Don’t Care
DO
b
T6n
T6n
READ