M25P80-VMW6G STMicroelectronics, M25P80-VMW6G Datasheet - Page 19

• Manufacturer Part Number: M25P80-VMW6G
• Description: M25P80 CMOST7X 2P-3MSO 08 WIDE .208 (EIAJ)
• Manufacturer: STMicroelectronics

Specifications of M25P80-VMW6G

• Lead Free Status / Rohs Status: RoHS Compliant part

Read Data Bytes at Higher Speed
(FAST_READ)
The device is first selected by driving Chip Select
(S) Low. The instruction code for the Read Data
Bytes at Higher Speed (FAST_READ) instruction
is followed by a 3-byte address (A23-A0) and a
dummy byte, each bit being latched-in during the
rising edge of Serial Clock (C). Then the memory
contents, at that address, is shifted out on Serial
Data Output (Q), each bit being shifted out, at a
maximum frequency f
Serial Clock (C).
The instruction sequence is shown in
The first byte addressed can be at any location.
The address is automatically incremented to the
Figure 14. Read Data Bytes at Higher Speed (FAST_READ) Instruction Sequence and Data-Out
Sequence
Note: Address bits A23 to A20 are Don’t Care.
S
C
D
Q
S
C
D
Q
0
7
1
32 33 34
High Impedance
C
6
2
, during the falling edge of
Instruction
Dummy Byte
5
3
4
4
35
3
5
36 37 38 39 40 41 42 43 44 45 46
2
6
1
7
Figure
23
0
8
MSB
22 21
7
9 10
24 BIT ADDRESS
14..
6
DATA OUT 1
5
3
28 29 30 31
4
2
3
next higher address after each byte of data is shift-
ed out. The whole memory can, therefore, be read
with a single Read Data Bytes at Higher Speed
(FAST_READ) instruction. When the highest ad-
dress is reached, the address counter rolls over to
000000h, allowing the read sequence to be contin-
ued indefinitely.
The
(FAST_READ) instruction is terminated by driving
Chip Select (S) High. Chip Select (S) can be driv-
en High at any time during data output. Any Read
Data Bytes at Higher Speed (FAST_READ) in-
struction, while an Erase, Program or Write cycle
is in progress, is rejected without having any ef-
fects on the cycle that is in progress.
1
2
0
1
Read
0
47
MSB
7
Data
6
DATA OUT 2
5
4
Bytes
3
2
1
at
0
MSB
Higher
7
AI04006
M25P80
Speed
19/41