M25P80-VMW6G STMicroelectronics, M25P80-VMW6G Datasheet - Page 25

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M25P80-VMW6G

Manufacturer Part Number
M25P80-VMW6G
Description
M25P80 CMOST7X 2P-3MSO 08 WIDE .208 (EIAJ)
Manufacturer
STMicroelectronics
Datasheet

Specifications of M25P80-VMW6G

Lead Free Status / Rohs Status
RoHS Compliant part

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Figure 20. Release from Deep Power-down (RES) Instruction Sequence
Driving Chip Select (S) High after the 8-bit instruc-
tion byte has been received by the device, but be-
fore the whole of the 8-bit Electronic Signature has
been transmitted for the first time (as shown in
ure
Stand-by Power mode. If the device was not pre-
viously in the Deep Power-down mode, the transi-
tion to the Stand-by Power mode is immediate. If
20.), still insures that the device is put into
S
C
D
Q
High Impedance
0
1
2
Instruction
3
4
5
6
7
Fig-
Deep Power-down Mode
the device was previously in the Deep Power-
down mode, though, the transition to the Stand-by
Power mode is delayed by t
(S) must remain High for at least t
specified in
mode, the device waits to be selected, so that it
can receive, decode and execute instructions.
t
RES1
Table
17.. Once in the Stand-by Power
Stand-by Mode
RES1
, and Chip Select
RES1
(max), as
M25P80
AI04078B
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