M25P80-VMW6G STMicroelectronics, M25P80-VMW6G Datasheet - Page 22

• Manufacturer Part Number: M25P80-VMW6G
• Description: M25P80 CMOST7X 2P-3MSO 08 WIDE .208 (EIAJ)
• Manufacturer: STMicroelectronics

Specifications of M25P80-VMW6G

• Lead Free Status / Rohs Status: RoHS Compliant part

M25P80
Bulk Erase (BE)
The Bulk Erase (BE) instruction sets all bits to 1
(FFh). Before it can be accepted, a Write Enable
(WREN) instruction must previously have been ex-
ecuted. After the Write Enable (WREN) instruction
has been decoded, the device sets the Write En-
able Latch (WEL).
The Bulk Erase (BE) instruction is entered by driv-
ing Chip Select (S) Low, followed by the instruction
code on Serial Data Input (D). Chip Select (S)
must be driven Low for the entire duration of the
sequence.
The instruction sequence is shown in
Chip Select (S) must be driven High after the
eighth bit of the instruction code has been latched
Figure 17. Bulk Erase (BE) Instruction Sequence
22/41
S
C
D
Figure
0
17..
1
2
Instruction
3
in, otherwise the Bulk Erase instruction is not exe-
cuted. As soon as Chip Select (S) is driven High,
the self-timed Bulk Erase cycle (whose duration is
t
progress, the Status Register may be read to
check the value of the Write In Progress (WIP) bit.
The Write In Progress (WIP) bit is 1 during the self-
timed Bulk Erase cycle, and is 0 when it is com-
pleted. At some unspecified time before the cycle
is completed, the Write Enable Latch (WEL) bit is
reset.
The Bulk Erase (BE) instruction is executed only if
all Block Protect (BP2, BP1, BP0) bits are 0. The
Bulk Erase (BE) instruction is ignored if one, or
more, sectors are protected.
4
BE
) is initiated. While the Bulk Erase cycle is in
5
6
7
AI03752D