IKW40N120T2XK Infineon Technologies, IKW40N120T2XK Datasheet - Page 10

• Manufacturer Part Number: IKW40N120T2XK
• Manufacturer: Infineon Technologies

Specifications of IKW40N120T2XK

• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -40C
• Operating Temperature (max): 175C
• Operating Temperature Classification: Automotive
• Lead Free Status / Rohs Status: Compliant

Power Semiconductors
10
10
10
Figure 21. Typical turn on behavior
Figure 23. IGBT transient thermal resistance
600V
400V
200V
-1
-2
-3
0V
K/W
K/W
K/W
0us
V
10µs
I
C
CE
D=0.5
0.05
0.1
0.2
(V
Dynamic test circuit in Figure E)
(D = t
0.4us
GE
100µs
=0/15V, R
single pulse
0.02
0.01
p
t
P
/ T)
,
PULSE WIDTH
t,
0.8us
1ms
TIME
G
R
0.064
0.074
0.162
0.010
=12Ω, T
R , ( K / W )
1
C
1
=
10ms
1
/ R
1.2us
1
j
= 175 C,
C
3.67*10
3.92*10
1.92*10
3.40*10
2
100ms
=
, ( s )
2
/ R
TrenchStop
R
2
-4
-3
-2
-1
60A
40A
20A
0A
2
10
Figure 22. Typical turn off behavior
Figure 24. Diode transient thermal impedance
60A
40A
20A
10
10
10
®
0A
0us
-1
-2
-3
2
K/W
K/W
K/W
V
I
nd
C
CE
Generation Series
10µs
D=0.5
0.05
(V
Dynamic test circuit in Figure E)
as a function of pulse width
(D=t
0.2
0.1
0.4us
GE
=15/0V, R
P
100µs
/T)
0.02
0.01
single pulse
t
P
,
PULSE WIDTH
IKW40N120T2
0.8us
t,
TIME
1ms
G
=12Ω, T
R
0.112
0.163
0.234
0.015
R , ( K / W )
1
C
1
=
1.2us
10ms
1
/ R
j
Rev. 2.2
= 175 C,
1
C
2.80*10
3.27*10
1.71*10
2.68*10
2
=
100ms
, ( s )
2
/ R
600V
400V
200V
0V
Sep 08
R
2
-4
-3
-2
-1
2