IKW40N120T2XK Infineon Technologies, IKW40N120T2XK Datasheet - Page 4

• Manufacturer Part Number: IKW40N120T2XK
• Manufacturer: Infineon Technologies

Specifications of IKW40N120T2XK

• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -40C
• Operating Temperature (max): 175C
• Operating Temperature Classification: Automotive
• Lead Free Status / Rohs Status: Compliant

Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
1)
Power Semiconductors
Leakage inductance L a n d Stray capacity C due to dynamic test circuit in Figure E.
b
t
t
t
t
E
E
E
t
Q
I
d i
d ( o n )
r
d ( o f f )
f
r r
r r m
Symbol
o n
o f f
t s
r r
r r
/ d t
TrenchStop
j
=175 C
4
T
V
V
R
L
C
Energy losses include
“tail” and diode reverse
recovery.
T
V
d i
j
j
C C
G E
R
G
= 1 7 5 C
= 1 7 5 C
F
1 )
1 )
= 6 0 0 V , I
= 1 2 ,
/ d t = 9 5 0 A/ s
= 6 0 0 V , I
= 0 / 1 5 V ,
= 1 8 0 n H ,
= 6 7 p F
Conditions
®
2
nd
F
C
= 4 0 A ,
= 4 0 A ,
Generation Series
min.
IKW40N120T2
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
405
195
480
200
4.5
3.8
8.3
6.6
32
28
31
Rev. 2.2
max.
-
-
-
-
-
-
-
-
-
-
Sep 08
Unit
ns
mJ
ns
µC
A
A/ s