IKW40N120T2XK Infineon Technologies, IKW40N120T2XK Datasheet - Page 2

• Manufacturer Part Number: IKW40N120T2XK
• Manufacturer: Infineon Technologies

Specifications of IKW40N120T2XK

• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -40C
• Operating Temperature (max): 175C
• Operating Temperature Classification: Automotive
• Lead Free Status / Rohs Status: Compliant

Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic, at T
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Power Semiconductors
j
= 25 C, unless otherwise specified
Symbol
R
R
R
V
V
V
V
I
I
g
C E S
G E S
Symbol
f s
( B R ) C E S
C E ( s a t )
F
G E ( t h )
t h J C
t h J C D
t h J A
TrenchStop
2
V
V
T
T
T
V
T
T
T
I
V
V
T
T
T
V
V
C
j
j
j
j
j
j
j
j
j
G E
G E
G E
C E
G E
C E
C E
= 2 5 C
= 1 5 0 C
= 1 7 5 C
= 2 5 C
= 1 5 0 C
= 1 7 5 C
= 1 . 5 m A , V
= 2 5 C
= 1 5 0 C
= 1 7 5 C
= 1 2 0 0 V
= 0 V , V
= 2 0 V , I
= 0 V , I
= 0 V , I
= 0 V
= 1 5 V , I
Conditions
Conditions
®
2
G E
C
F
nd
=4 0 A
=5 0 0 µ A
C
,
C E
= 2 0 V
= 4 0 A
C
Generation Series
= 4 0 A
= V
G E
1200
min.
5.2
IKW40N120T2
-
-
-
-
-
-
-
-
-
-
-
Max. Value
Value
0.31
0.53
1.75
2.25
1.75
1.80
1.80
typ.
2.3
5.8
40
21
-
-
-
-
-
Rev. 2.2
max.
200
2.2
2.2
6.4
0.4
4.0
20
-
-
-
-
-
-
Sep 08
Unit
K/W
Unit
V
mA
nA
S