IKW40N120T2XK Infineon Technologies, IKW40N120T2XK Datasheet - Page 7

• Manufacturer Part Number: IKW40N120T2XK
• Manufacturer: Infineon Technologies

Specifications of IKW40N120T2XK

• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -40C
• Operating Temperature (max): 175C
• Operating Temperature Classification: Automotive
• Lead Free Status / Rohs Status: Compliant

Power Semiconductors
1000ns
100ns
Figure 9.
Figure 11. Typical switching times as a
100ns
10ns
10ns
1ns
t
t
f
d(off)
t
t
t
r
t
d(off)
t
d(on)
f
t
r
d(on)
Typical switching times as a
function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
function of junction temperature
(inductive load, V
I
Dynamic test circuit in Figure E)
T
C
GE
=40A, R
J
I
0°C
,
C
=0/15V, R
,
JUNCTION TEMPERATURE
20A
COLLECTOR CURRENT
G
=12Ω,
50°C
G
=12Ω,
40A
J
CE
=175°C, V
=600V, V
100°C
60A
CE
GE
=600V,
=0/15V,
TrenchStop
150°C
7
Figure 10. Typical switching times as a
Figure 12. Gate-emitter threshold voltage as a
1000 ns
6.5V
6.0V
5.5V
5.0V
4.5V
4.0V
3.5V
®
100 ns
10 ns
2
nd
Generation Series
t
t
t
d(on)
d(off)
f
t
r
function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
function of junction temperature
(I
T
C
GE
J
0°C
= 1.5mA)
,
=0/15V, I
JUNCTION TEMPERATURE
R
G
,
GATE RESISTOR
IKW40N120T2
C
50°C
=40A,
J
=175°C, V
100°C
Rev. 2.2
CE
min.
typ.
=600V,
max.
150°C
Sep 08