IKW40N120T2XK Infineon Technologies, IKW40N120T2XK Datasheet - Page 11

• Manufacturer Part Number: IKW40N120T2XK
• Manufacturer: Infineon Technologies

Specifications of IKW40N120T2XK

• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -40C
• Operating Temperature (max): 175C
• Operating Temperature Classification: Automotive
• Lead Free Status / Rohs Status: Compliant

Power Semiconductors
Figure 23. Typical reverse recovery time as a
Figure 25. Typical reverse recovery current as
40A
35A
30A
25A
20A
15A
10A
5A
0A
600ns
500ns
400ns
300ns
200ns
100ns
400A/µs
0ns
400A/µs
di
di
function of diode current slope
(V
Dynamic test circuit in Figure E)
a function of diode current slope
(V
Dynamic test circuit in Figure E)
F
F
R
R
/dt,
/dt,
=600V, I
=600V, I
800A/µs
DIODE CURRENT SLOPE
DIODE CURRENT SLOPE
800A/µs
F
F
=40A,
=40A,
1200A/µs
1200A/µs
1600A/µs
T
T
J
T
J
T
=25°C
1600A/µs
=175°C
J
J
=25°C
=175°C
TrenchStop
11
Figure 24. Typical reverse recovery charge as
Figure 26. Typical diode peak rate of fall of
-1000A/µs
8µC
6µC
4µC
2µC
0µC
®
-800A/µs
-600A/µs
-400A/µs
-200A/µs
2
-0A/µs
400A/µs
nd
Generation Series
400A/µs
a function of diode current slope
(V
Dynamic test circuit in Figure E)
reverse recovery current as a
function of diode current slope
(V
Dynamic test circuit in Figure E)
di
di
F
F
R
R
/dt,
/dt,
=600V, I
=600V, I
800A/µs
DIODE CURRENT SLOPE
DIODE CURRENT SLOPE
800A/µs
IKW40N120T2
F
F
=40A,
=40A,
1200A/µs
1200A/µs
Rev. 2.2
T
1600A/µs
T
J
1600A/µs
J
=25°C
=175°C
T
T
J
J
=175°C
=25°C
Sep 08