IKW40N120T2XK Infineon Technologies, IKW40N120T2XK Datasheet - Page 8

• Manufacturer Part Number: IKW40N120T2XK
• Manufacturer: Infineon Technologies

Specifications of IKW40N120T2XK

• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -40C
• Operating Temperature (max): 175C
• Operating Temperature Classification: Automotive
• Lead Free Status / Rohs Status: Compliant

Power Semiconductors
20.0mJ
15.0mJ
10.0mJ
7.5mJ
5.0mJ
2.5mJ
0.0mJ
Figure 13. Typical switching energy losses as
Figure 15. Typical switching energy losses as
5.0mJ
0.0mJ
*) E
*) E
due to diode recovery
a function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
a function of junction temperature
(inductive load, V
I
Dynamic test circuit in Figure E)
due to diode recovery
on
T
C
0°C
GE
=40A, R
on
J
and E
I
,
20A
C
=0/15V, R
and E
,
JUNCTION TEMPERATURE
COLLECTOR CURRENT
ts
include losses
ts
include losses
G
50°C
=12Ω,
G
40A
=12Ω,
J
CE
=175°C, V
=600V, V
100°C
60A
CE
GE
=600V,
150°C
=0/15V,
TrenchStop
E
E
E
off
on
ts
E
*
*
E
E
8
ts
on
off
*
*
Figure 14. Typical switching energy losses as a
Figure 16. Typical switching energy losses as
10.0 mJ
10.0mJ
®
7.5 mJ
5.0 mJ
2.5 mJ
0.0 mJ
7.5mJ
5.0mJ
2.5mJ
0.0mJ
2
nd
400V
Generation Series
E
V
ts
CE
*
function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
a function of collector emitter
voltage
(inductive load, T
I
Dynamic test circuit in Figure E)
C
*) E
,
GE
=40A, R
*) E
due to diode recovery
COLLECTOR
=0/15V, I
due to diode recovery
on
on
R
and E
500V
G
and E
,
GATE RESISTOR
IKW40N120T2
G
ts
=12Ω,
ts
include losses
C
include losses
-
=40A,
EMITTER VOLTAGE
600V
J
J
=175°C, V
=175°C, V
Rev. 2.2
700V
CE
GE
=600V,
=0/15V,
E
Sep 08
on
E
E
E
E
*
off
ts
on
off
*
*