MC68HC908LD60IFU Freescale Semiconductor, MC68HC908LD60IFU Datasheet - Page 60

MC68HC908LD60IFU

Manufacturer Part Number
MC68HC908LD60IFU
Description
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MC68HC908LD60IFU

Cpu Family
HC08
Device Core Size
8b
Frequency (max)
6MHz
Program Memory Type
Flash
Program Memory Size
60KB
Total Internal Ram Size
1KB
# I/os (max)
39
Number Of Timers - General Purpose
2
Operating Supply Voltage (typ)
3.3V
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
On-chip Adc
6-chx8-bit
Instruction Set Architecture
CISC
Operating Temp Range
0C to 85C
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
64
Package Type
PQFP
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MC68HC908LD60IFU
Manufacturer:
FREESCALE
Quantity:
840
FLASH Memory
4.6 FLASH Mass Erase Operation
Technical Data
60
NOTE:
Programming and erasing of FLASH locations cannot be performed by
code being executed from the same FLASH array that is being
programmed or erased. While these operations must be performed in
the order as shown, but other unrelated operations may occur between
the steps.
A mass erase operation erases an entire array of FLASH memory. The
MC68HC908LD60 contains two FLASH memory arrays, therefore, two
mass erase operations are required to erase all FLASH memory in the
device. Mass erasing the 13k-byte array, erases all FLASH memory
from $0800 to $3FFF. Mass erasing the 47,616-byte array, erases all
FLASH memory from $4000 to $FFFF.
Use the following procedure to erase an entire FLASH memory array:
4. Set the HVEN bit.
5. Wait for a time, t
6. Clear the ERASE bit.
7. Wait for a time, t
8. Clear the HVEN bit.
9. After a time, t
1. Set both the ERASE bit, and the MASS bit in the FLASH control
2. Write any data to any FLASH address within the FLASH memory
3. Wait for a time, t
4. Set the HVEN bit.
5. Wait for a time, t
6. Clear the ERASE bit.
7. Wait for a time, t
read mode.
register.
address range.
FLASH Memory
rcv
(min. 1µs), the memory can be accessed again in
Erase
nvh
nvs
ERASE
nvhl
(5µs).
(min. 5µs)
(100µs).
(min. 10ms)
(10ms).
MC68HC908LD60
Freescale Semiconductor
Rev. 1.1

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