UPD75P3216GT Renesas Electronics America, UPD75P3216GT Datasheet - Page 27

• Manufacturer Part Number: UPD75P3216GT
• Manufacturer: Renesas Electronics America

Specifications of UPD75P3216GT

• Lead Free Status / Rohs Status: Supplier Unconfirmed

8. ONE-TIME PROM (PROGRAM MEMORY) WRITE AND VERIFY
one time only. The pins listed in the table below are used for this PROM’s write/verify operations. Clock input from the
X1 pin is used instead of address input as a method for updating addresses.
8.1 Operation Modes for Program Memory Write/Verify
verify mode. The following operation modes can be specified by setting pins MD0 to MD3 as shown below.
The program memory contained in the µ PD75P3216 is a 16384 × 8-bit one-time PROM that can be electrically written
When +6 V is applied to the V
Caution
+12.5 V
V
X1, X2
MD0 to MD3
D0/P60/KR0-D3/P63/KR3 (lower 4 bits)
D4/P50-D7/P53 (upper 4 bits)
V
X: L or H
Pins not used for program memory write/verify should be connected to Vss.
V
PP
DD
PP
Operation Mode Specification
+6 V
V
DD
Pin
DD
MD0
H
H
L
L
pin and +12.5 V to the V
MD1
H
X
L
L
Data Sheet U10241EJ1V1DS
MD2
H
H
H
H
Pin where program voltage is applied during program
memory write/verify (usually V
Clock input pins for address updating during program
memory write/verify. Input the X1 pin’s inverted signal to
the X2 pin.
Operation mode selection pin for program memory write/
verify
8-bit data I/O pins for program memory write/verify
Pin where power supply voltage is applied. Applies 1.8 to
5.5 V in normal operation mode and +6 V for program
memory write/verify.
MD3
H
H
H
L
PP
pin, the µ PD75P3216 enters the program memory write/
Zero-clear program memory address
Write mode
Verify mode
Program inhibit mode
Function
Operation Mode
DD
potential)
µ PD75P3216
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