UPD75P3216GT Renesas Electronics America, UPD75P3216GT Datasheet - Page 28

• Manufacturer Part Number: UPD75P3216GT
• Manufacturer: Renesas Electronics America

Specifications of UPD75P3216GT

• Lead Free Status / Rohs Status: Supplier Unconfirmed

8.2 Program Memory Write Procedure
26
Program memory can be written at high speed using the following procedure.
(1) Pull down unused pins to Vss through resistors. Set the X1 pin low.
(2) Supply 5 V to the V
(3) Wait 10 µ s.
(4) Select the zero-clear program memory address mode.
(5) Supply 6 V to the V
(6) Write data in the 1 ms write mode.
(7) Select the verify mode. If the data is correct, go to step (8) and if not, repeat steps (6) and (7).
(8) (X : number of write operations from steps (6) and (7)) × 1 ms additional write.
(9) Apply four pulses to the X1 pin to increment the program memory address by one.
(10) Repeat steps (6) to (9) until the end address is reached.
(11) Select the zero-clear program memory address mode.
(12) Return the V
(13) Turn off the power.
The following figure shows steps (2) to (9).
D0/P60/KR0-
D3/P63/KR3
V
V
MD0/P30
MD1/P31
MD2/P32
MD3/P33
D4/P50-
D7/P53
DD
PP
V
DD
V
V
V
+ 1
X1
DD
DD
PP
DD
and V
DD
DD
PP
and V
and 12.5 V to the V
pins back to 5 V.
Data input
PP
Write
pins.
X repetitions
Data Sheet U10241EJ1V1DS
PP
pins.
Verify
output
Data
Data input
Additional
write
increment
Address
µ PD75P3216