UPD75P3216GT Renesas Electronics America, UPD75P3216GT Datasheet - Page 42

• Manufacturer Part Number: UPD75P3216GT
• Manufacturer: Renesas Electronics America

Specifications of UPD75P3216GT

• Lead Free Status / Rohs Status: Supplier Unconfirmed

DC Programming Characteristics (T
Cautions 1. Keep V
AC Programming Characteristics (T
Notes 1.
40
Input voltage, high
Input voltage, low
Input leakage current
Output voltage, high
Output voltage, low
V
V
Address setup time
(vs. MD0 ↓)
MD1 setup time (vs. MD0 ↓)
Data setup time (vs. MD0 ↓)
Address hold time
(vs. MD0 ↑)
Data hold time (vs. MD0 ↑)
MD0 ↑ → data output float
delay time
V
V
Initial program pulse width
Additional program pulse width
MD0 setup time (vs. MD1 ↑)
MD0 ↓ → data output delay time
MD1 hold time (vs. MD0 ↑)
MD1 recovery time (vs. MD0 ↓)
Program counter reset time
X1 input high-, low-level width
X1 input frequency
Initial mode set time
MD3 setup time (vs. MD1 ↑)
MD3 hold time (vs. MD1 ↓)
MD3 setup time (vs. MD0 ↓)
Address
delay time
Address
hold time
MD3 hold time (vs. MD0 ↑)
MD3 ↓ → data output float
delay time
DD
PP
PP
DD
supply current
setup time (vs. MD3 ↑)
supply current
setup time (vs. MD3 ↑)
2.
Note 2
Note 2
Parameter
Parameter
2. Apply V
Symbol of corresponding µ PD27C256A
The internal address signal is incremented by one at the rising edge of the fourth X1 input and is not
connected to a pin.
→ data output
→ data output
Note 2
Note 2
PP
DD
to within +13.5 V, including overshoot.
before V
V
V
V
V
I
V
V
I
I
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
f
t
t
t
t
t
t
t
t
LI
DD
PP
AS
M1S
DS
AH
DH
DF
VPS
VDS
PW
OPW
M0S
DV
M1H
M1R
PCR
XH
X
1
M3S
M3H
M3SR
DAD
HAD
M3HR
DFR
IH1
IH2
IL1
IL2
OH
OL
Symbol
, t
XL
PP
and turn it off after V
A
A
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Note 1
AS
OES
DS
AH
DH
DF
VPS
VCS
PW
OPW
CES
DV
OEH
OR
ACC
OH
= 25
= 25
—
—
—
—
—
—
—
—
—
Other than X1, X2 pins
X1, X2
Other than X1, X2 pins
X1, X2
V
I
I
MD0 = V
OH
OL
Data Sheet U10241EJ1V1DS
IN
±
±
= 1.6 mA
= – 1 mA
= V
5
5
MD0 = MD1 = V
t
When program memory is read
When program memory is read
When program memory is read
When program memory is read
When program memory is read
M1H
°
°
C, V
C, V
IL
IL
+ t
or V
Test Conditions
, MD1 = V
M1R
DD
DD
Test Conditions
IH
≥ 50 µ s
= 6.0
= 6.0
PP
IH
.
IL
±
±
0.25 V, V
0.25 V, V
PP
PP
V
V
= 12.5
= 12.5
0.7 V
DD
DD
0.125
MIN.
MIN.
0.95
0.95
10
0
0
2
2
2
2
2
0
2
2
2
2
2
2
2
2
2
0
2
– 0.5
– 1.0
DD
±
±
0.3 V, V
0.3 V, V
TYP.
TYP.
1.0
0.3 V
SS
SS
MAX.
MAX.
1.05
21.0
4.19
V
V
130
130
0.4
0.4
10
30
30
1
2
2
= 0V)
DD
DD
= 0 V)
µ PD75P3216
DD
MHz
Unit
Unit
mA
mA
µ A
ms
ms
µ s
µ s
µ s
µ s
µ s
ns
µ s
µ s
µ s
µ s
µ s
µ s
µ s
µ s
µ s
µ s
µ s
µ s
µ s
ns
µ s
µ s
V
V
V
V
V
V