RC28F256P30B85 Micron Technology Inc, RC28F256P30B85 Datasheet - Page 36

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RC28F256P30B85

Manufacturer Part Number
RC28F256P30B85
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of RC28F256P30B85

Cell Type
NOR
Density
256Mb
Access Time (max)
85/17ns
Interface Type
Parallel/Serial
Boot Type
Bottom
Address Bus
24b
Operating Supply Voltage (typ)
1.8V
Operating Temp Range
-40C to 85C
Package Type
EZBGA
Program/erase Volt (typ)
1.7 to 2/8.5 to 9.5V
Sync/async
Async/Sync
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
1.7V
Operating Supply Voltage (max)
2V
Word Size
16b
Number Of Words
16M
Supply Current
28mA
Mounting
Surface Mount
Pin Count
64
Lead Free Status / Rohs Status
Not Compliant

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Micron Technology Inc
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9.3
9.4
Datasheet
36
during Erase Suspend. Additionally, Clear Status Register, Program, Program Suspend,
Block Lock, Block Unlock, and Block Lock-Down are valid commands during Erase
Suspend.
During an erase suspend, deasserting CE# places the device in standby, reducing
active current. V
while in erase suspend. If RST# is asserted, the device is reset.
Erase Resume
The Erase Resume command instructs the device to continue erasing, and
automatically clears status register bits SR[7,6]. This command can be written to any
address. If status register error bits are set, the Status Register should be cleared
before issuing the next instruction. RST# must remain deasserted (see
“Program Suspend/Resume Flowchart” on page
Erase Protection
When V
V
PP
is below V
PP
= V
IL
PPLK
, absolute hardware erase protection is provided for all device blocks. If
PP
, erase operations halt and SR[3] is set indicating a V
must remain at a valid level, and WP# must remain unchanged
81).
PP
Figure 35,
-level error.
August 2008
306666-12
P30

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