RC28F256P30B85 Micron Technology Inc, RC28F256P30B85 Datasheet - Page 54

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RC28F256P30B85

Manufacturer Part Number
RC28F256P30B85
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of RC28F256P30B85

Cell Type
NOR
Density
256Mb
Access Time (max)
85/17ns
Interface Type
Parallel/Serial
Boot Type
Bottom
Address Bus
24b
Operating Supply Voltage (typ)
1.8V
Operating Temp Range
-40C to 85C
Package Type
EZBGA
Program/erase Volt (typ)
1.7 to 2/8.5 to 9.5V
Sync/async
Async/Sync
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
1.7V
Operating Supply Voltage (max)
2V
Word Size
16b
Number Of Words
16M
Supply Current
28mA
Mounting
Surface Mount
Pin Count
64
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RC28F256P30B85A
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
RC28F256P30B85D
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Table 26: DC Current Characteristics (Sheet 2 of 2)
14.2
Table 27: DC Voltage Characteristics
Datasheet
54
Notes:
1.
2.
3.
4.
5.
V
V
V
V
V
V
V
Notes:
1.
2.
3.
Sym
Sym
IL
IH
OL
OH
PPLK
LKO
LKOQ
I
PPE
All currents are RMS unless noted. Typical values at typical V
I
Sampled, not 100% tested.
I
I
Characteristics” on page 67
Synchronous read mode is not supported with TTL inputs.
V
V
V
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
V
V
V
CCS
CCES
CCW
IL
PP
PP
CC
CCQ
PP
can undershoot to –0.4 V and V
≤ V
, I
Erase Current
Lock-Out Voltage
Lock Voltage
is the average current measured over any 5 ms time interval 5 µs after CE# is deasserted.
Parameter
is specified with the device deselected. If device is read while in erase suspend, current is I
Lock Voltage
CCE
PPLK
DC Voltage Characteristics
measured over typical or max times specified in
inhibits erase and program operations. Do not use V
Parameter
V
(VCCQ = 1.7 V – 3.6 V)
V
CCQ
CCQ
Min
1.0
0.9
– 0.4 V
0
-
-
CMOS Inputs
– 0.1
.
IH
can overshoot to V
0.05
Typ
1.7 V - 3.6
8
(V
Inputs
CMOS
CCQ
V)
V
Max
0.4
0.1
0.4
CCQ
-
-
-
Max
0.10
=
22
(VCCQ = 2.4 V – 3.6 V)
0.05
V
Typ
TTL Inputs
2.4 V - 3.6
8
CCQ
CCQ
(V
Min
2.0
1.0
0.9
Section 16.0, “Program and Erase
CCQ
TTL Inputs
0
-
-
V)
– 0.1
+ 0.4 V for durations of 20 ns or less.
CC
Max
0.10
, T
=
22
PPL
C
= +25 °C.
and V
Unit
mA
V
Max
(1)
0.6
0.1
0.4
CCQ
PPH outside their valid ranges.
-
-
-
V
V
PP
PP
= V
= V
Unit
V
V
V
V
V
V
V
Test Conditions
PPL,
PPH,
erase in progress
erase in progress
V
V
I
V
V
I
OL
OH
CC
CCQ
CC
CCQ
Test Condition
= 100 µA
= –100 µA
= V
= V
= V
= V
CCES
CC
CC
CCQ
CCQ
Min
Min
plus I
Min
Min
CCR
August 2008
306666-12
.
2
3
Notes
Notes
P30

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