TDA8920CJ/N1,112 NXP Semiconductors, TDA8920CJ/N1,112 Datasheet

IC AMP AUDIO PWR 220W 23SIL

TDA8920CJ/N1,112

Manufacturer Part Number
TDA8920CJ/N1,112
Description
IC AMP AUDIO PWR 220W 23SIL
Manufacturer
NXP Semiconductors
Type
Class Dr
Datasheet

Specifications of TDA8920CJ/N1,112

Output Type
1-Channel (Mono) or 2-Channel (Stereo)
Package / Case
23-SIL (Bent and Staggered Leads)
Max Output Power X Channels @ Load
220W x 1 @ 8 Ohm; 125W x 2 @ 4 Ohm
Voltage - Supply
±12.5 V ~ 32.5 V
Features
Depop, Differential Inputs, Mute, Short-Circuit and Thermal Protection, Standby
Mounting Type
Through Hole
Product
Class-D
Output Power
210 W
Available Set Gain
36 dB
Common Mode Rejection Ratio (min)
75 dB
Thd Plus Noise
0.05 %
Maximum Operating Temperature
+ 85 C
Mounting Style
Through Hole
Audio Load Resistance
8 Ohms
Dual Supply Voltage
+/- 30 V
Input Signal Type
Differential
Minimum Operating Temperature
- 40 C
Output Signal Type
Differential, Single
Supply Type
Dual
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-4784-5
935281808112
TDA8920CJ/N1
TDA8920CJ/N1,112
TDA8920CJ/N1
1. General description
2. Features
3. Applications
The TDA8920C is a high-efficiency class-D audio power amplifier. The typical output
power is 2
The TDA8920C is available in both HSOP24 and DBS23P power packages. The amplifier
operates over a wide supply voltage range from 12.5 V to 32.5 V and features low
quiescent current consumption.
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
TDA8920C
2
Rev. 02 — 11 June 2009
Pin compatible with TDA8950/20B for both HSOP24 and DBS23P packages
Symmetrical operating supply voltage range from 12.5 V to 32.5 V
Stereo full differential inputs, can be used as stereo Single-Ended (SE) or mono
Bridge-Tied Load (BTL) amplifier
High output power in typical applications:
Low noise
Smooth pop noise-free start-up and switch off
Zero dead time switching
Fixed frequency
Internal or external clock
High efficiency
Low quiescent current
Advanced protection strategy: voltage protection and output current limiting
Thermal FoldBack (TFB)
Fixed gain of 30 dB in SE and 36 dB in BTL applications
Fully short-circuit proof across load
BD modulation in BTL configuration
DVD
Mini and micro receiver
Home Theater In A Box (HTIAB) system
High-power speaker system
N
N
N
N
SE 2
SE 2
SE 2
BTL 1
110 W class-D power amplifier
110 W with a speaker load impedance of 4 .
110 W, R
125 W, R
120 W, R
220 W, R
L
L
L
L
= 4
= 4
= 3
= 8
(V
(V
(V
(V
P
P
P
P
= 30 V)
= 32 V)
= 29 V)
= 30 V)
Product data sheet

Related parts for TDA8920CJ/N1,112

TDA8920CJ/N1,112 Summary of contents

Page 1

TDA8920C 2 Rev. 02 — 11 June 2009 1. General description The TDA8920C is a high-efficiency class-D audio power amplifier. The typical output power is 2 The TDA8920C is available in both HSOP24 and DBS23P power packages. The amplifier operates ...

Page 2

... NXP Semiconductors 4. Quick reference data Table 1. Quick reference data Symbol Parameter [1] General supply voltage P V overvoltage protection supply voltage Standby, Mute modes; V P(ovp) I total quiescent current q(tot) Stereo single-ended configuration P output power o Mono bridge-tied load configuration P output power o [ the supply voltage on pins VDDP1, VDDP2 and VDDA ...

Page 3

... NXP Semiconductors 6. Block diagram VDDA n.c. 3 (20) 10 (4) 9 (3) IN1M INPUT 8 (2) STAGE IN1P mute 11 (5) n.c. 7 (1) OSC OSCILLATOR 6 (23) MODE MODE 2 (19) SGND mute 5 (22) IN2P INPUT 4 (21) STAGE IN2M 1 (18) 12 (6) VSSA n.c. Pin numbers in brackets refer to type number TDA8920CJ. ...

Page 4

... NXP Semiconductors 7. Pinning information 7.1 Pinning VSSD 24 VDDP2 23 22 BOOT2 OUT2 21 VSSP2 20 19 n.c. TDA8920CTH 18 STABI VSSP1 17 OUT1 16 15 BOOT1 VDDP1 14 PROT 13 Fig 2. Pin configuration TDA8920CTH TDA8920C_2 Product data sheet 1 VSSA 2 SGND 3 VDDA 4 IN2M 5 IN2P 6 MODE 7 OSC 8 IN1P 9 IN1M 10 n.c. ...

Page 5

... NXP Semiconductors 7.2 Pin description Table 3. Symbol VSSA SGND VDDA IN2M IN2P MODE OSC IN1P IN1M n.c. n.c. n.c. PROT VDDP1 BOOT1 OUT1 VSSP1 STABI n.c. VSSP2 OUT2 BOOT2 VDDP2 VSSD 8. Functional description 8.1 General The TDA8920C is a two-channel audio power amplifier that uses class-D technology. ...

Page 6

... NXP Semiconductors The TDA8920C single-chip class-D amplifier contains high-power switches, drivers, timing and handshaking between the power switches, along with some control logic. To ensure maximum system robustness, an advanced protection strategy has been implemented to provide overvoltage, overtemperature and overcurrent protection. Each of the two audio channels contains a PWM modulator, an analog feedback loop and a differential input stage ...

Page 7

... NXP Semiconductors To ensure the coupling capacitors at the inputs (C the outputs start switching, a delay is inserted during the transition from Mute to Operating mode. An overview of the start-up timing is provided in MODE pin should be forced LOW at least 100 ms before the supply lines (V drop below 12.5 V. (1) First Fig 5 ...

Page 8

... NXP Semiconductors 8.2 Pulse-width modulation frequency The amplifier output signal is a PWM signal with a typical carrier frequency of between 250 kHz and 450 kHz. A 2nd-order LC demodulation filter on the output is used to convert the PWM signal into an analog audio signal. The carrier frequency is determined by an external resistor, R frequency setting is between 250 kHz and 450 kHz ...

Page 9

... NXP Semiconductors 8.3.1.2 OverTemperature Protection (OTP) If TFB fails to stabilize the temperature and the junction temperature continues to rise, the amplifier will shut down as soon as the temperature reaches the thermal protection activation threshold, T after the temperature drops below T The thermal behavior is illustrated in (1) Duty cycle of PWM output modulated according to the audio input signal ...

Page 10

... NXP Semiconductors When OCP is activated, the power transistors are turned off. They are turned on again during the next switching cycle. If the output current is still greater than the OCP threshold, they will be immediately switched off again. This switching will continue until C discharged. The amplifier will then be switched off completely and a restart sequence initiated. After a fi ...

Page 11

... NXP Semiconductors 8.3.4 Supply voltage protection If the supply voltage drops below the minimum supply voltage threshold, V circuit will be activated and the system will shut down. Once the supply voltage rises above V If the supply voltage exceeds the maximum supply voltage threshold, V circuit will be activated and the power stages will be shut down ...

Page 12

... NXP Semiconductors Fig 7. 9. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter [1] V supply voltage P I repetitive peak output current ORM T storage temperature stg T ambient temperature amb T junction temperature j V voltage on pin MODE ...

Page 13

... NXP Semiconductors 11. Static characteristics Table 8. Static characteristics [ 345 kHz osc amb Symbol Parameter Supply V supply voltage P V overvoltage protection supply voltage P(ovp) V undervoltage protection supply voltage V P(uvp) V unbalance protection supply voltage P(ubp) I total quiescent current q(tot) I standby current stb Mode select input; pin MODE ...

Page 14

... NXP Semiconductors Fig 8. 12. Dynamic characteristics 12.1 Switching characteristics Table 9. Dynamic characteristics [ unless otherwise specified. P amb Symbol Parameter Internal oscillator f typical oscillator frequency R osc(typ) f oscillator frequency osc External oscillator input or frequency tracking; pin OSC V voltage on pin OSC OSC V trip voltage ...

Page 15

... NXP Semiconductors 12.2 Stereo SE configuration characteristics Table 10. Dynamic characteristics kHz Symbol Parameter P output power o THD total harmonic distortion G closed-loop voltage gain v(cl) SVRR supply voltage ripple rejection Z input impedance i V output noise voltage n(o) channel separation cs G voltage gain difference ...

Page 16

... NXP Semiconductors 12.3 Mono BTL application characteristics Table 11. Dynamic characteristics kHz Symbol Parameter P output power o THD total harmonic distortion G closed-loop voltage gain v(cl) SVRR supply voltage ripple rejection Z input impedance i V output noise voltage n(o) mute attenuation mute CMRR common mode rejection ratio ...

Page 17

... NXP Semiconductors 13. Application information 13.1 Mono BTL application When using the power amplifi mono BTL application, the inputs of the two channels must be connected in parallel and the phase of one of the inputs must be inverted; see Figure 7. In principle, the loudspeaker can be connected between the outputs of the two single-ended demodulation fi ...

Page 18

... NXP Semiconductors 13.3.2 Bridge-Tied Load (BTL) Maximum output power 0.5% Maximum output current internally limited to 9 peak Where: • P o(0.5 %) • load impedance L • R DSon(hs) • R DSon(ls) • • single-sided supply voltage or 0.5 P • t w(min) • f osc Remark: Note that I of the current through the load and the ripple current. The value of the ripple current is dependent on the coil inductance and the voltage drop across the coil ...

Page 19

... NXP Semiconductors 13.5 Heatsink requirements An external heatsink must be connected to the TDA8920C. Equation 5 of TFB and total thermal resistance from junction to ambient – Power dissipation (P) is determined by the efficiency of the TDA8920C. Efficiency measured as a function of output power is given in derived as a function of output power as shown in ...

Page 20

... NXP Semiconductors In the following example, a heatsink calculation is made for supply: The audio signal has a crest factor of 10 (the ratio between peak power and average power (20 dB)); this means that the average output power is Thus, the peak RMS output power level is the 0.5 % THD level, i.e. 170 W. ...

Page 21

... NXP Semiconductors The most effective way to avoid pumping effects is to connect the TDA8920C in a mono full-bridge configuration. In the case of stereo single-ended applications advised to connect the inputs in anti-phase (see be adapted; for example, by increasing the values of the supply line decoupling capacitors. 13.7 Application schematic Notes on the application schematic: • ...

Page 22

R VDDA VDDA 10 VDDP VDDP C VDDP 470 GND VSSP 470 F VSSP VSSP R VSSA operating VSSA 10 n.c. n.c. n. IN1P 2 470 nF IN1 ...

Page 23

... NXP Semiconductors 13.8 Curves measured in reference design THD (%) (1) f (2) f (3) f Fig 11. THD + function of output power, SE configuration with 2 THD (%) (1) f (2) f (3) f Fig 12. THD + function of output power, SE configuration with 2 TDA8920C_2 Product data sheet 350 kHz configuration. P osc = 6 kHz. ...

Page 24

... NXP Semiconductors THD (%) (1) f (2) f (3) f Fig 13. THD + function of output power, BTL configuration with 1 THD (%) (1) P (2) P Fig 14. THD + function of frequency, SE configuration with 2 TDA8920C_2 Product data sheet 350 kHz BTL configuration. P osc = 6 kHz kHz 100 350 kHz configuration. ...

Page 25

... NXP Semiconductors THD (%) (1) P (2) P Fig 15. THD + function of frequency, SE configuration with 2 THD (%) (1) P (2) P Fig 16. THD + function of frequency, BTL configuration with 1 TDA8920C_2 Product data sheet ( ( 350 kHz configuration. P osc = (1) ( 350 kHz BTL configuration. P osc = Rev. 02 — 11 June 2009 ...

Page 26

... NXP Semiconductors (dB) Fig 17. Channel separation as a function of frequency, SE configuration with 2 (dB) Fig 18. Channel separation as a function of frequency, SE configuration with 2 TDA8920C_2 Product data sheet 100 350 kHz configuration. P osc 1 W and 10 W respectively 100 350 kHz configuration. P osc 1 W and 10 W respectively. Rev. 02 — ...

Page 27

... NXP Semiconductors P (W) (1) 2 (2) 2 (3) 2 Fig 19. Power dissipation as a function of output power per channel, SE configuration (%) (1) 2 (2) 2 (3) 2 Fig 20. Efficiency as a function of output power per channel, SE configuration TDA8920C_2 Product data sheet kHz 350 kHz P i osc 4 SE configuration. ...

Page 28

... NXP Semiconductors P o (W) (1) THD + (2) THD + THD + (3) THD + THD + (4) THD + Fig 21. Output power as a function of supply voltage, SE configuration P (W) (1) THD + (2) THD + (3) THD + (4) THD + Fig 22. Output power as a function of supply voltage, BTL configuration TDA8920C_2 Product data sheet ...

Page 29

... NXP Semiconductors G v(cl) (dB) (1) 1 (2) 2 (3) 2 (4) 2 Fig 23. Closed-loop voltage gain as a function of frequency SVRR (dB) (1) Mute mode. (2) Operating mode. (3) Standby mode. Fig 24. SVRR as a function of ripple frequency, ripple on V TDA8920C_2 Product data sheet 350 kHz 100 mV osc i 8 BTL configuration. ...

Page 30

... NXP Semiconductors SVRR (dB) (1) Mute mode. (2) Operating mode. (3) Standby mode. Fig 25. SVRR as a function of ripple frequency, ripple (V) (1) Mode voltage down. (2) Mode voltage up. Fig 26. Output voltage as a function of mode voltage TDA8920C_2 Product data sheet (2) (1) 100 (3) 120 140 Ripple short on input pins. ...

Page 31

... NXP Semiconductors mute (dB Fig 27. Mute attenuation as a function of frequency TDA8920C_2 Product data sheet (1) 80 (2) ( 325 kHz (RMS). P osc i Rev. 02 — 11 June 2009 TDA8920C 2 110 W class-D power amplifier 010aaa541 (Hz) i © NXP B.V. 2009. All rights reserved ...

Page 32

... NXP Semiconductors 14. Package outline DBS23P: plastic DIL-bent-SIL power package; 23 leads (straight lead length 3.2 mm DIMENSIONS (mm are the original dimensions) (1) UNIT 4.6 1.15 1.65 0.75 0.55 30.4 mm 4.3 0.85 1.35 0.60 0.35 29.9 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. ...

Page 33

... NXP Semiconductors HSOP24: plastic, heatsink small outline package; 24 leads; low stand-off height pin 1 index DIMENSIONS (mm are the original dimensions UNIT max. 0.08 0.53 3.5 mm 3.5 0.35 0.04 0.40 3.2 Notes 1. Limits per individual lead. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. ...

Page 34

... NXP Semiconductors 15. Soldering of SMD packages This text provides a very brief insight into a complex technology. A more in-depth account of soldering ICs can be found in Application Note AN10365 “Surface mount reflow soldering description” . 15.1 Introduction to soldering Soldering is one of the most common methods through which packages are attached to Printed Circuit Boards (PCBs), to form electrical circuits ...

Page 35

... NXP Semiconductors 15.4 Reflow soldering Key characteristics in reflow soldering are: • Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to higher minimum peak temperatures (see reducing the process window • Solder paste printing issues including smearing, release, and adjusting the process window for a mix of large and small components on one board • ...

Page 36

... NXP Semiconductors Fig 30. Temperature profiles for large and small components For further information on temperature profiles, refer to Application Note AN10365 “Surface mount reflow soldering description” . 16. Soldering of through-hole mount packages 16.1 Introduction to soldering through-hole mount packages This text gives a very brief insight into wave, dip and manual soldering. ...

Page 37

... NXP Semiconductors 16.4 Package related soldering information Table 14. Package CPGA, HCPGA DBS, DIP, HDIP, RDBS, SDIP, SIL [2] PMFP [1] For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board. [2] For PMFP packages hot bar soldering or manual soldering is suitable. ...

Page 38

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 39

... NXP Semiconductors 20. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 5 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 6 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Pinning information . . . . . . . . . . . . . . . . . . . . . . 4 7.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Functional description . . . . . . . . . . . . . . . . . . . 5 8.1 General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8.2 Pulse-width modulation frequency . . . . . . . . . . 8 8.3 Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 8.3.1 Thermal protection . . . . . . . . . . . . . . . . . . . . . . 8 8 ...

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