N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology

BSS138PW

Manufacturer Part NumberBSS138PW
DescriptionN-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
ManufacturerNXP Semiconductors
BSS138PW datasheet
 
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
10
Page 10
11
12
13
14
15
16
Page 1/16

Download datasheet (333Kb)Embed
Next
BSS138PW
60 V, 320 mA N-channel Trench MOSFET
Rev. 1 — 2 November 2010
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a very small
SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad
for drain 1 cm
[2]
Pulse test: t
Quick reference data
Parameter
Conditions
= 25 °C
drain-source voltage
T
amb
= 25 °C
gate-source voltage
T
amb
= 25 °C;
drain current
T
amb
V
= 10 V
GS
= 25 °C;
drain-source on-state
T
j
resistance
V
= 10 V;
GS
I
= 300 mA
D
2
.
≤ 300 μs; δ ≤ 0.01.
p
Product data sheet
Min
Typ
Max
Unit
-
-
60
V
±20
-
-
V
[1]
-
-
320
mA
Ω
[2]
-
0.9
1.6

BSS138PW Summary of contents

  • Page 1

    ... BSS138PW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 2 November 2010 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching ...

  • Page 2

    ... amb T amb = 25 °C; peak drain current T amb single pulse; t All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PW 60 V, 320 mA N-channel Trench MOSFET Simplified outline Graphic symbol [1] Marking code XJ* Min - - [ ° 100 ° ...

  • Page 3

    ... T amb 017aaa001 75 125 175 T (°C) amb Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PW 60 V, 320 mA N-channel Trench MOSFET Min = 25 °C [ −55 − °C [1] - 120 I der ...

  • Page 4

    ... Thermal characteristics Parameter Conditions thermal resistance from in free air junction to ambient thermal resistance from junction to solder point All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PW 60 V, 320 mA N-channel Trench MOSFET 017aaa121 (1) (2) (3) (4) (5) ( (V) ...

  • Page 5

    ... Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BSS138PW Product data sheet − − All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PW 60 V, 320 mA N-channel Trench MOSFET 017aaa028 (s) p 017aaa029 2 10 ...

  • Page 6

    ... GS turn-off delay time R G fall time source-drain voltage I S ≤ 300 μs; δ ≤ 0.01. p All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PW 60 V, 320 mA N-channel Trench MOSFET Min = 10 μ 250 μ 0 ...

  • Page 7

    ... V 2.0 V 3.0 4.0 V (V) DS Fig 7. 017aaa114 R (2) (3) (4) (5) 0.6 0.8 1.0 I (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PW 60 V, 320 mA N-channel Trench MOSFET − (A) −4 10 (1) (2) −5 10 −6 10 0.0 0.5 1 ° amb DS (1) minimum values ...

  • Page 8

    ... Fig 11. Normalized drain-source on-state resistance 017aaa117 C (pF) 120 180 T (°C) amb (1) C (2) C (3) C Fig 13. Input, output and reverse transfer All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PW 60 V, 320 mA N-channel Trench MOSFET 2.4 1.8 1.2 0.6 0.0 − 120 R DSon a = ...

  • Page 9

    ... Q (nC °C amb Fig 15. Gate charge waveform definitions 1 (A) 0.8 (1) 0.4 0.0 0.0 0.4 0.8 All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PW 60 V, 320 mA N-channel Trench MOSFET GS(pl) V GS(th GS1 GS2 G(tot) 017aaa120 (2) 1 ...

  • Page 10

    ... BSS138PW Product data sheet P duty cycle δ All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PW 60 V, 320 mA N-channel Trench MOSFET 006aaa812 © NXP B.V. 2010. All rights reserved ...

  • Page 11

    ... scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2.0 REFERENCES JEDEC JEITA SC-70 All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PW 60 V, 320 mA N-channel Trench MOSFET detail 0.45 0.23 0.2 0.2 0.15 0.13 EUROPEAN PROJECTION SOT323 ...

  • Page 12

    ... All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PW 60 V, 320 mA N-channel Trench MOSFET solder lands solder resist solder paste 1.3 occupied area 0.5 (3×) Dimensions in mm 1.8 Dimensions in mm preferred transport 09 direction during soldering (2× ...

  • Page 13

    ... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date BSS138PW v.1 20101102 BSS138PW Product data sheet Data sheet status Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PW 60 V, 320 mA N-channel Trench MOSFET Change notice ...

  • Page 14

    ... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PW 60 V, 320 mA N-channel Trench MOSFET © NXP B.V. 2010. All rights reserved ...

  • Page 15

    ... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PW 60 V, 320 mA N-channel Trench MOSFET © NXP B.V. 2010. All rights reserved ...

  • Page 16

    ... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BSS138PW All rights reserved. Date of release: 2 November 2010 Document identifier: BSS138PW ...