BSS138PW NXP Semiconductors, BSS138PW Datasheet - Page 9

• Manufacturer Part Number: BSS138PW
• Description: N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BSS138PW
Product data sheet
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source current as a function of source-drain voltage; typical values
V
(V)
(1) T
(2) T
GS
5.0
4.0
3.0
2.0
1.0
0.0
0.0
I
charge; typical values
V
D
amb
amb
GS
= 300 mA; V
= 0 V
= 150 °C
= 25 °C
0.2
DS
= 30 V; T
0.4
amb
(A)
I
S
= 25 °C
1.2
0.8
0.4
0.0
0.6
0.0
All information provided in this document is subject to legal disclaimers.
Q
017aaa119
G
(nC)
Rev. 1 — 2 November 2010
0.8
0.4
Fig 15. Gate charge waveform definitions
(1)
0.8
V
(2)
V
SD
V
V
V
GS(pl)
017aaa120
DS
GS(th)
GS
60 V, 320 mA N-channel Trench MOSFET
(V)
1.2
Q
GS1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
BSS138PW
GD
© NXP B.V. 2010. All rights reserved.
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