BSS138PW NXP Semiconductors, BSS138PW Datasheet - Page 2

N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology

BSS138PW

Manufacturer Part Number
BSS138PW
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
BSS138PW
Product data sheet
Table 2.
Table 3.
Table 4.
[1]
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
3
Type number Package
BSS138PW
Type number
BSS138PW
Symbol
V
V
I
I
D
DM
DS
GS
* = placeholder for manufacturing site code
Symbol
G
S
D
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
Pinning
Ordering information
Marking codes
Limiting values
Name
SC-70
All information provided in this document is subject to legal disclaimers.
Description
gate
source
drain
Rev. 1 — 2 November 2010
Description
plastic surface-mounted package; 3 leads
T
T
V
Conditions
T
single pulse; t
amb
amb
amb
GS
T
T
amb
amb
= 10 V
= 25 °C
= 25 °C
= 25 °C;
= 25 °C
= 100 °C
Marking code
XJ*
60 V, 320 mA N-channel Trench MOSFET
p
≤ 10 μs
Simplified outline
1
[1]
[1]
3
Min
-
-
-
-
-
2
BSS138PW
Graphic symbol
© NXP B.V. 2010. All rights reserved.
Max
60
±20
320
200
1.2
mbb076
G
Version
SOT323
D
S
Unit
V
V
mA
mA
A
2 of 16

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