BSS138PW NXP Semiconductors, BSS138PW Datasheet
BSS138PW
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BSS138PW Summary of contents
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... BSS138PW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 2 November 2010 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching ...
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... amb T amb = 25 °C; peak drain current T amb single pulse; t All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PW 60 V, 320 mA N-channel Trench MOSFET Simplified outline Graphic symbol [1] Marking code XJ* Min - - [ ° 100 ° ...
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... T amb 017aaa001 75 125 175 T (°C) amb Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PW 60 V, 320 mA N-channel Trench MOSFET Min = 25 °C [ −55 − °C [1] - 120 I der ...
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... Thermal characteristics Parameter Conditions thermal resistance from in free air junction to ambient thermal resistance from junction to solder point All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PW 60 V, 320 mA N-channel Trench MOSFET 017aaa121 (1) (2) (3) (4) (5) ( (V) ...
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... Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BSS138PW Product data sheet − − All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PW 60 V, 320 mA N-channel Trench MOSFET 017aaa028 (s) p 017aaa029 2 10 ...
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... GS turn-off delay time R G fall time source-drain voltage I S ≤ 300 μs; δ ≤ 0.01. p All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PW 60 V, 320 mA N-channel Trench MOSFET Min = 10 μ 250 μ 0 ...
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... V 2.0 V 3.0 4.0 V (V) DS Fig 7. 017aaa114 R (2) (3) (4) (5) 0.6 0.8 1.0 I (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PW 60 V, 320 mA N-channel Trench MOSFET − (A) −4 10 (1) (2) −5 10 −6 10 0.0 0.5 1 ° amb DS (1) minimum values ...
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... Fig 11. Normalized drain-source on-state resistance 017aaa117 C (pF) 120 180 T (°C) amb (1) C (2) C (3) C Fig 13. Input, output and reverse transfer All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PW 60 V, 320 mA N-channel Trench MOSFET 2.4 1.8 1.2 0.6 0.0 − 120 R DSon a = ...
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... Q (nC °C amb Fig 15. Gate charge waveform definitions 1 (A) 0.8 (1) 0.4 0.0 0.0 0.4 0.8 All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PW 60 V, 320 mA N-channel Trench MOSFET GS(pl) V GS(th GS1 GS2 G(tot) 017aaa120 (2) 1 ...
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... BSS138PW Product data sheet P duty cycle δ All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PW 60 V, 320 mA N-channel Trench MOSFET 006aaa812 © NXP B.V. 2010. All rights reserved ...
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... scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2.0 REFERENCES JEDEC JEITA SC-70 All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PW 60 V, 320 mA N-channel Trench MOSFET detail 0.45 0.23 0.2 0.2 0.15 0.13 EUROPEAN PROJECTION SOT323 ...
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... All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PW 60 V, 320 mA N-channel Trench MOSFET solder lands solder resist solder paste 1.3 occupied area 0.5 (3×) Dimensions in mm 1.8 Dimensions in mm preferred transport 09 direction during soldering (2× ...
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... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date BSS138PW v.1 20101102 BSS138PW Product data sheet Data sheet status Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PW 60 V, 320 mA N-channel Trench MOSFET Change notice ...
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... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PW 60 V, 320 mA N-channel Trench MOSFET © NXP B.V. 2010. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PW 60 V, 320 mA N-channel Trench MOSFET © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BSS138PW All rights reserved. Date of release: 2 November 2010 Document identifier: BSS138PW ...