STM32L151VB STMicroelectronics, STM32L151VB Datasheet - Page 69

• Manufacturer Part Number: STM32L151VB
• Description: Ultra-low-power ARM Cortex-M3 MCU with 128 Kbytes Flash, 32 MHz CPU, LCD, USB
• Manufacturer: STMicroelectronics

Specifications of STM32L151VB

• Operating Power Supply Range: 1.65 V to 3.6 V (without BOR) or 1.8 V to 3.6 V (with BOR option)
• Temperature Range: –40 to 85 °C
• 4 Modes: Sleep, Low-power run (9 μA at 32 kHz), Low-power sleep (4.4 μA),Stop with RTC (1.45 μA), Stop (570 nA), Standby (300 nA)
• Ultralow Leakage Per I/o: 50 nA
• Fast Wakeup From Stop: 8 μs
• Core: ARM 32-bit Cortex™-M3 CPU
• Dma: 7-channel DMA controller, supporting timers, ADC, SPIs, I2Cs and USARTs

STM32L151xx, STM32L152xx
6.3.9
Table 32.
1. Based on characterization not tested in production.
2. Characterization is done according to JEDEC JESD22-A117.
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
●
●
A device reset allows normal operations to be resumed.
The test results are given in
defined in application note AN1709.
Table 33.
V
V
Symbol
Symbol
N
t
FESD
EFTB
RET
CYC
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V
V
compliant with the IEC 61000-4-4 standard.
(2)
(2)
SS
through a 100 pF capacitor, until a functional disturbance occurs. This test is
Cycling (erase / write )
Program memory
Cycling (erase / write )
EEPROM data memory
Data retention (program memory) after
10 kcycles at T
Data retention (EEPROM data memory)
after 300 kcycles at T
Data retention (program memory) after
10 kcycles at T
Data retention (EEPROM data memory)
after 300 kcycles at T
Voltage limits to be applied on any I/O pin to
induce a functional disturbance
Fast transient voltage burst limits to be
applied through 100 pF on V
pins to induce a functional disturbance
Flash memory endurance and data retention
EMS characteristics
Parameter
A
A
Parameter
= 85 °C
= 105 °C
Table
A
A
Doc ID 17659 Rev 6
= 85 °C
= 105 °C
33. They are based on the EMS levels and classes
DD
and V
SS
T
105 °C
T
T
A
RET
RET
= -40°C to
V
f
conforms to IEC 61000-4-2
V
f
conforms to IEC 61000-4-4
Conditions
HCLK
HCLK
DD
DD
= +85 °C
= +105 °C
= 3.3 V, LQFP100, T
= 3.3 V, LQFP100, T
= 32 MHz
= 32 MHz
Conditions
Electrical characteristics
Min
300
30
30
10
10
10
(1)
Value
A
A
Typ Max
= +25 °C,
= +25 °C,
DD
kcycles
and
years
Level/
Unit
Class
69/109
2B
4A