ST72324BK2 STMicroelectronics, ST72324BK2 Datasheet - Page 171

• Manufacturer Part Number: ST72324BK2
• Description: 5V RANGE 8-BIT MCU WITH 8 TO 32K FLASH/ROM, 10-BIT ADC, 4 TIMERS, SPI, SCI INTERFACE
• Manufacturer: STMicroelectronics

Specifications of ST72324BK2

• Hdflash Endurance: 1 kcycle at 55 °C, data retention 40 years at 85 °C
• Clock Sources: crystal/ceramic resonator oscillators, int. RC osc. and ext. clock input
• 4 Power Saving Modes: Slow, Wait, Active-halt, and Halt

ST72324Bxx
12.13.3
Table 113. ADC accuracy
1. Data based on characterization results, monitored in production to guarantee 99.73% within ± max value from -40°C to
2. ADC accuracy vs. negative injection current: Injecting negative current may reduce the accuracy of the conversion being
Figure 88. ADC accuracy characteristics
Symbol
|E
|E
|E
|E
|E
125 °C (± 3σ distribution limits).
performed on another analog input. Any positive injection current within the limits specified for I
Section 12.9
1023
1022
1021
Digital result ADCDR
O
G
D
T
L
|
|
|
|
|
7
6
5
4
3
2
1
V
0
SSA
Total unadjusted error
Offset error
Gain error
Differential linearity error
Integral linearity error
ADC accuracy
does not affect the ADC accuracy.
1
E
1LSB
O
Parameter
2
(2)
(2)
IDEAL
3
=
4
V
--------------------------------------------
AREF
(2)
(2)
5
1 LSB
1024
(2)
–
V
E
6
SSA
T
IDEAL
E
CPU in run mode @ f
7
L
(2)
E
Conditions
D
1021
(3)
(1)
1023
ADC
E
G
V
2 MHz
AREF
(1) Example of an actual transfer curve.
(2) The ideal transfer curve.
(3) End point correlation line.
E
deviation between the actual and the ideal
transfer curves.
E
actual transition and the first ideal one.
E
ideal transition and the last actual one.
E
deviation between actual steps and the ideal
one.
E
deviation between any actual transition and the
end point correlation line.
T
O
G
D
L
= Total Unadjusted Error: maximum
= Integral Linearity Error: maximum
= Differential Linearity Error: maximum
= Offset Error: deviation between the first
= Gain Error: deviation between the last
Typ
0.5
3
2
1
V
in
(LSB
8/16 Kbyte
ROM and
Electrical characteristics
IDEAL
Flash
INJ(PIN)
4
3
3
2
)
Max
and ΣI
(1)
32 Kbyte
INJ(PIN)
Flash
4.5
6
5
2
3
in
171/193
Unit
LSB