ST92F150CV1 STMicroelectronics, ST92F150CV1 Datasheet - Page 395

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ST92F150CV1

Manufacturer Part Number
ST92F150CV1
Description
8-bit MCU
Manufacturer
STMicroelectronics
Datasheet

Specifications of ST92F150CV1

Internal Memory
Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 (Emulated EEPROM)
Minimum Instruction Time
83 ns (24 MHz int. clock)

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SPI TIMING TABLE
(V
Note:
Measurement points are V
(1) Values guaranteed by design.
Legend:
Tck = INTCLK period = Crystal Oscillator Clock period when CLOCK1 is not divided by 2;
N° Symbol
10
11
12
13
1
2
3
4
5
6
7
8
9
DD
= 5V ± 10%, T
t
t
t
SPI_H
SPI_L
t
t
f
t
t
t
Lead
t
t
Hold
Rise
Lag
SPI
SPI
Fall
SU
t
t
Dis
t
H
A
V
SPI frequency
SPI clock period
Enable lead time
Enable lag time
Clock (SCK) high time
Clock (SCK) low time
Data set-up time
Data hold time (inputs)
Access time (time to data active
from high impedance state)
Disable time (hold time to high im-
pedance state)
Data valid
Data hold time (outputs)
Rise time
(20% V
Fall time
(70% V
2 x Crystal Oscillator Clock period when CLOCK1 is divided by 2;
Crystal Oscillator Clock period x PLL factor when the PLL is enabled.
A
OL
DD
DD
=
, V
to 70% V
to 20% V
OH
Parameter
40°C to +125°C, C
, V
IL
and V
DD
DD
, C
, C
IH
L
L
in the SPI Timing Diagram.
ST92F124/F150/F250 - ELECTRICAL CHARACTERISTICS
= 200pF)
= 200pF)
Load
Master
Slave
Master
Slave
Slave
Slave
Master
Slave
Master
Slave
Master
Slave
Master
Slave
Slave
Master (before capture edge)
Slave (after enable edge)
Master (before capture edge)
Slave (after enable edge)
Outputs: SCK,MOSI,MISO
Inputs: SCK,MOSI,MISO,SS
Outputs: SCK,MOSI,MISO
Inputs: SCK,MOSI,MISO,SS
= 50pF, f
Condition
INTCLK
= 24MHz, unless otherwise specified)
f
INTCLK
4 x Tck
2 x Tck
Tck / 4
Tck / 4
Min
40
40
80
90
80
90
40
40
40
40
0
0
0
/ 128
Value
(1)
f
f
INTCLK
INTCLK
Max
120
240
120
100
100
100
100
/ 4
/ 2
395/429
MHz
Unit
μs
μs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1

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