ST92F150CV1 STMicroelectronics, ST92F150CV1 Datasheet - Page 60

• Manufacturer Part Number: ST92F150CV1
• Description: 8-bit MCU
• Manufacturer: STMicroelectronics

Specifications of ST92F150CV1

• Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 (Emulated EEPROM)
• Minimum Instruction Time: 83 ns (24 MHz int. clock)

ST92F124/F150/F250 - SINGLE VOLTAGE FLASH & E3 TM (EMULATED EEPROM)
3.4 WRITE OPERATION EXAMPLE
Each operation (both Flash and
by a sequence of instructions like the following:
OR
LD
LD
..
LD
OR
The first instruction is used to select the desired
operation by setting its corresponding selection bit
in the Control Register (FCR for Flash operations,
ECR for
Table 11. Flash Write Operations
Table 12.
60/429
9
Sector Erase Suspend
FCR, #OPMASK ;Operation selection
ADD1, #DATA1 ;1st Add and Data
ADD2, #DATA2 ;2nd Add and Data
...., ......
ADDn, #DATAn ;nth Add and Data
FCR, #80h
Page Program
Set Protection
Byte Program
Sector Erase
Page Update
Chip Erase
Chip Erase
E
Operation
Operation
3 TM
E
3 TM
operations).
Write Operations
;n range = (1 to 16)
;Operation start
Selection bit
Selection bit
FPAGE
EPAGE
E
FSECT
FSUSP
FBYTE
FCHIP
ECHIP
PROT
3 TM
) is activated
Addresses and Data
Addresses and Data
From 1 to 4 sectors
From 1 to 16 bytes
From 1 to 16 bytes
From 1 to 4 bytes
The load instructions are used to set the address-
es (in the Flash or in the
the data to be modified.
The last instruction is used to start the write oper-
ation, by setting the start bit (FWMS for Flash op-
erations, EWMS for
register.
Once selected, but not yet started, one operation
can be cancelled by resetting the operation selec-
tion bit. Any latched address and data will be reset.
Warning: during the Flash Page Program or the
TM
the page address: only the last page address is ef-
fectively kept and all programming will effect only
that page.
A summary of the available Flash and
operations are shown in the following tables:
1 byte
None
None
None
Page Update operation it is forbidden to change
Start bit
Start bit
FWMS
FWMS
FWMS
FWMS
FWMS
EWMS
EWMS
None
E
3 TM
E
operation) in the Control
3 TM
memory space) and
Typical Duration
160 μs (16 bytes)
Typical Duration
1.5 s (1 sector)
40 μs (4 bytes)
30 ms
10 μs
15 μs
3 s
E
3 TM
write
E
3