PBSS302ND

Manufacturer Part NumberPBSS302ND
DescriptionPbss302nd 40 V, 4 A Npn Low Vcesat Biss Transistor
ManufacturerNXP Semiconductors
PBSS302ND datasheet
 
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PBSS302ND
40 V, 4 A NPN low V
Rev. 02 — 18 February 2008
1. Product profile
1.1 General description
NPN low V
small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS302PD.
1.2 Features
I
Ultra low collector-emitter saturation voltage V
I
4 A continuous collector current capability I
I
Up to 15 A peak current
I
Very low collector-emitter saturation resistance
I
High efficiency due to less heat generation
1.3 Applications
I
Power management functions
I
Charging circuits
I
DC-to-DC conversion
I
MOSFET gate driving
I
Power switches (e.g. motors, fans)
I
Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
I
CM
R
CEsat
[1]
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
[2]
Pulse test: t
(BISS) transistor
CEsat
Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
CEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage
open base
collector current
peak collector current
single pulse;
t
1 ms
p
collector-emitter
I
= 6 A;
C
saturation resistance
I
= 600 mA
B
300 s;
0.02.
p
Product data sheet
CEsat
C
Min
Typ
Max
-
-
40
[1]
-
-
4
-
-
15
[2]
-
55
75
O
, standard footprint.
2
3
Unit
V
A
A
m

PBSS302ND Summary of contents

  • Page 1

    ... PBSS302ND NPN low V Rev. 02 — 18 February 2008 1. Product profile 1.1 General description NPN low V small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS302PD. 1.2 Features I Ultra low collector-emitter saturation voltage continuous collector current capability peak current ...

  • Page 2

    ... T amb Rev. 02 — 18 February 2008 PBSS302ND NPN low V (BISS) transistor CEsat Simplified outline Symbol Marking code C7 Min ...

  • Page 3

    ... P tot (mW) 1200 (1) 800 (2) (3) (4) 400 standard footprint 2 3 Rev. 02 — 18 February 2008 PBSS302ND NPN low V (BISS) transistor CEsat Min Max - 150 65 +150 65 +150 10 % and pulse width t 10 ms. p 006aaa270 75 125 175 amb 2 2 © ...

  • Page 4

    ... Product data sheet Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point O , standard footprint Rev. 02 — 18 February 2008 PBSS302ND NPN low V CEsat Conditions Min Typ [1] in free air - - [ [ [ ...

  • Page 5

    ... Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS302ND_2 Product data sheet Rev. 02 — 18 February 2008 PBSS302ND NPN low V (BISS) transistor CEsat 006aaa272 (s) p 006aaa273 ...

  • Page 6

    ... Boff turn-on time storage time fall time turn-off time transition frequency 100 MHz collector capacitance MHz 300 s; 0.02. p Rev. 02 — 18 February 2008 PBSS302ND NPN low V CEsat Min Typ = ...

  • Page 7

    ... Fig 6. Collector current as a function of 006aaa275 1.6 V BEsat (V) 1.2 0.8 0 (mA) C (1) T (2) T (3) T Fig 8. Base-emitter saturation voltage as a function of Rev. 02 — 18 February 2008 PBSS302ND NPN low V CEsat 14 I (mA) = 400 B 12 360 320 280 10 240 200 160 8 120 ...

  • Page 8

    ... Fig 10. Collector-emitter saturation voltage as a 006aaa281 10 R CEsat ( ) 10 (1) (2) ( (mA) C (1) I (2) I (3) I Fig 12. Collector-emitter saturation resistance as a Rev. 02 — 18 February 2008 PBSS302ND NPN low V CEsat 1 1 (1) ( amb /I = 100 ...

  • Page 9

    ... PBSS302ND_2 Product data sheet (probe) oscilloscope 450 0 Bon Boff Rev. 02 — 18 February 2008 PBSS302ND NPN low V CEsat I (100 %) Bon I Boff off (probe) o oscilloscope 450 ...

  • Page 10

    ... Product data sheet 3.1 2.7 6 3.0 1.7 2.5 1.3 pin 1 index 1 0.95 1.9 Dimensions in mm Packing methods Package Description SOT457 4 mm pitch tape and reel pitch tape and reel; T2 Rev. 02 — 18 February 2008 PBSS302ND NPN low V (BISS) transistor CEsat 1.1 0 0.6 0 0.40 0.26 0.25 0.10 04-11-08 [1] Packing quantity 3000 ...

  • Page 11

    ... Product data sheet 3.45 1.95 0.95 3.30 2.825 1.60 1.70 3.10 3.20 Dimensions in mm 5.30 1.40 4.30 Dimensions in mm Rev. 02 — 18 February 2008 PBSS302ND NPN low V (BISS) transistor CEsat solder lands solder resist 0.45 0.55 occupied area solder paste msc422 0.45 1.45 4.45 msc423 © NXP B.V. 2008. All rights reserved. solder lands solder resist occupied area ...

  • Page 12

    ... FE information”: added “Soldering”: added information”: updated Product data sheet Rev. 02 — 18 February 2008 PBSS302ND NPN low V (BISS) transistor CEsat Change notice Supersedes - PBSS302ND_1 conditions amended 2 footprint amended - - © NXP B.V. 2008. All rights reserved ...

  • Page 13

    ... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 18 February 2008 PBSS302ND NPN low V (BISS) transistor CEsat © NXP B.V. 2008. All rights reserved ...

  • Page 14

    ... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com (BISS) transistor CEsat All rights reserved. Date of release: 18 February 2008 Document identifier: PBSS302ND_2 ...