PBSS302ND NXP Semiconductors, PBSS302ND Datasheet - Page 4

• Manufacturer Part Number: PBSS302ND
• Description: Pbss302nd 40 V, 4 A Npn Low Vcesat Biss Transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Thermal characteristics
PBSS302ND_2
Product data sheet
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Z
(K/W)
th(j-a)
10
10
10
10
1
3
2
1
10
FR4 PCB, standard footprint
duty cycle =
5
0.05
0.02
0.01
0.5
0.2
0.1
1
0
0.75
0.33
10
4
Table 6.
[1]
[2]
[3]
[4]
[5]
Symbol
R
R
th(j-a)
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Device mounted on a ceramic PCB, Al
Operated under pulsed conditions: Duty cycle
10
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Thermal characteristics
3
10
Rev. 02 — 18 February 2008
2
10
1
2
O
3
, standard footprint.
Conditions
in free air
10 % and pulse width t
1
40 V, 4 A NPN low V
[1][5]
10
[1]
[2]
[3]
[4]
Min
-
-
-
-
-
-
p
PBSS302ND
10 ms.
CEsat
10
Typ
-
-
-
-
-
-
2
© NXP B.V. 2008. All rights reserved.
(BISS) transistor
t
p
006aaa271
(s)
Max
350
208
167
113
50
45
10
3
2
2
.
.
Unit
K/W
K/W
K/W
K/W
K/W
K/W
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