PBSS302ND NXP Semiconductors, PBSS302ND Datasheet - Page 6

• Manufacturer Part Number: PBSS302ND
• Description: Pbss302nd 40 V, 4 A Npn Low Vcesat Biss Transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Characteristics
PBSS302ND_2
Product data sheet
Table 7.
T
[1]
Symbol Parameter
I
I
I
h
V
R
V
V
t
t
t
t
t
t
f
C
CBO
CES
EBO
d
r
on
s
f
off
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25 C unless otherwise specified.
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter
saturation voltage
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance V
Characteristics
p
300 s;
Rev. 02 — 18 February 2008
0.02.
Conditions
V
V
T
V
V
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
V
V
I
I
V
f = 100 MHz
f = 1 MHz
C
C
C
C
C
C
C
C
C
C
Bon
Boff
j
CB
CB
CE
EB
CE
CE
CE
CE
CE
CE
CC
CE
CB
= 150 C
= 0.5 A; I
= 1 A; I
= 2 A; I
= 4 A; I
= 6 A; I
= 6 A; I
= 0.5 A; I
= 1 A; I
= 1 A; I
= 4 A; I
= 0.1 A;
= 0.1 A
= 5 V; I
= 40 V; I
= 40 V; I
= 30 V; V
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 10 V; I
= 10 V; I
= 10 V; I
B
B
B
B
B
B
B
B
C
= 50 mA
= 200 mA
= 400 mA
= 600 mA
= 600 mA
= 50 mA
= 100 mA
= 400 mA
C
C
C
C
C
B
B
C
E
E
E
C
C
= 0 A
= 50 mA
= 50 mA
= 0.5 A
= 1 A
= 2 A
= 4 A
= 6 A
= 2 A
BE
= i
= 0 A
= 0 A;
= 0.1 A;
= 2 A;
= 0 V
40 V, 4 A NPN low V
e
= 0 A;
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
-
300
300
250
100
50
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PBSS302ND
CEsat
Typ
-
-
-
-
500
475
385
190
100
35
65
115
220
330
55
0.79
0.81
0.83
1.0
0.79
12
52
64
390
120
510
150
30
© NXP B.V. 2008. All rights reserved.
(BISS) transistor
Max
0.1
50
0.1
0.1
-
-
-
-
-
60
110
180
300
450
75
0.85
0.9
1
1.1
1.0
-
-
-
-
-
-
-
-
Unit
mV
mV
mV
mV
mV
m
V
V
V
V
V
ns
ns
ns
ns
ns
ns
MHz
pF
A
A
A
A
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