PBSS302ND NXP Semiconductors, PBSS302ND Datasheet - Page 2

• Manufacturer Part Number: PBSS302ND
• Description: Pbss302nd 40 V, 4 A Npn Low Vcesat Biss Transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
PBSS302ND_2
Product data sheet
Table 2.
Table 3.
Table 4.
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
3
4
5
6
Type number
PBSS302ND
Type number
PBSS302ND
Symbol
V
V
V
I
I
I
I
P
C
CM
B
BM
CBO
CEO
EBO
tot
Pinning
Ordering information
Marking codes
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
peak base current
total power dissipation
Description
collector
collector
base
emitter
collector
collector
Package
Name
SC-74
Rev. 02 — 18 February 2008
Description
plastic surface-mounted package (TSOP6); 6 leads
Conditions
open emitter
open base
open collector
single pulse;
t
single pulse;
t
T
p
p
amb
1 ms
1 ms
25 C
40 V, 4 A NPN low V
Marking code
C7
Simplified outline
1
6
[2][5]
[1]
[2]
[3]
[4]
[1]
5
2
Min
-
-
-
-
-
-
-
-
-
-
-
-
PBSS302ND
4
3
CEsat
Symbol
© NXP B.V. 2008. All rights reserved.
Max
60
40
5
4
15
0.8
2
360
600
750
1.1
2.5
(BISS) transistor
3
1, 2, 5, 6
sym014
Version
SOT457
4
Unit
V
V
V
A
A
A
A
mW
mW
mW
W
W
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