IS61C5128AL Integrated Silicon Solution, Inc., IS61C5128AL Datasheet - Page 7

• Manufacturer Part Number: IS61C5128AL
• Description: 512k X 8 High-speed Cmos Static Ram
• Manufacturer: Integrated Silicon Solution, Inc.

IS61C5128AL/AS
READ CYCLE SWITCHING CHARACTERISTICS
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
AC TEST CONDITIONS
Integrated Silicon Solution, Inc. — www.issi.com
Rev. B
03/04/2008
AC TEST LOADS
OUTPUT
Symbol
to 3.0V and output loading specified in Figure 1.
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
t
t
t
t
t
t
t
t
t
RC
OHA
DOE
AA
ACE
HZOE
LZOE
HZCE
LZCE
5V
(2)
(2)
(2)
(2)
Including
jig and
scope
30 pF
Figure 1
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CE Access Time
OE Access Time
OE to High-Z Output
OE to Low-Z Output
CE to High-Z Output
CE to Low-Z Output
480 Ω
255 Ω
IS64C5128AL/AS
See Figures 1 and 2
Min. Max.
OUTPUT
10
—
—
—
3
0
0
0
2
0V to 3.0V
-10
1.5V
Unit
3 ns
5V
10
10
—
—
—
—
5
5
5
Including
jig and
scope
5 pF
Figure 2
480 Ω
(1)
Min.
12
—
—
—
3
0
0
0
2
(Over Operating Range)
-12
Max.
12
12
—
—
—
—
6
6
6
255 Ω
Min. Max.
25
—
—
—
3
0
2
0
2
-25
25
25
15
—
—
—
—
8
8
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
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